AP2401A/AP2411A

Document number: DS37744 Rev. 1 - 2

4 of 18

www.diodes.com

March 2015

© Diodes Incorporated

AP2401A/AP2411A

Electrical Characteristics (@TA = +25°C, VIN = +5.0V, CIN = 0.1µF, CL= 1µF, unless otherwise specified.)

Symbol

Parameter

Test Conditions (Note 5)

Min

Typ

Max

Unit

VUVLO

Input UVLO

VIN rising

1.6

2.0

2.4

V

VUVLO

Input UVLO Hysteresis

VIN decreasing

-

50

-

mV

ISHDN

Input Shutdown Current

Disabled, OUT = open

-

0.1

1

µA

IQ

Input Quiescent Current

Enabled, OUT = open

-

60

100

µA

ILEAK

Input Leakage Current

Disabled, OUT grounded

-

0.1

1

µA

IREV

Reverse Leakage Current

Disabled, VIN = 0V, VOUT = 5V, IREV at VIN

-

0.01

1

µA

RDS(ON)

Switch on-Resistance

VIN = 5V, IOUT= 2.0A

TA = +25°C

-

70

84

m

-40°C ≤ TA ≤ +85°C

-

-

105

VIN = 3.3V, IOUT= 2.0A

TA = +25°C

-

90

108

-40°C ≤ TA ≤ +85°C

-

-

135

ILIMIT

Over-Load Current Limit

(Note 6)

VIN= 5V, VOUT= 4.5V

-40°C ≤ TA ≤+85°C

2.05

2.5

2.85

A

ITrig

Current Limiting Trigger Threshold

Output Current Slew rate (< 100A/s)

-

2.5

-

A

ISHORT

Short-Circuit Current Limit

Enabled into short circuit

1.8

2.75

3.3

A

TSHORT

Short-Circuit Response Time

VOUT = 0V to IOUT = ILIMIT (OUT shorted to ground)

-

2

-

µs

VIL

EN Input Logic Low Voltage

VIN = 2.7V to 5.5V

-

-

0.8

V

VIH

EN Input Logic High Voltage

VIN = 2.7V to 5.5V

2

-

-

V

ILEAK-EN EN Input Leakage

VIN = 5V, VEN = 0V and 5.5V

-

0.01

1

µA

ILEAK-O

Output Leakage Current

Disabled, VOUT = 0V

-

0.5

1

µA

TD(ON)

Output Turn-on Delay Time

CL = 1µF, RLOAD = 5

-

0.1

-

ms

TR

Output Turn-on Rise Time

CL = 1µF, RLOAD = 5

-

0.6

1.5

ms

TD(OFF)

Output Turn-off Delay Time

CL = 1µF, RLOAD = 5

-

0.1

-

ms

TF

Output Turn-off Fall Time

CL = 1µF, RLOAD = 5

-

0.05

0.1

ms

RFLG

FLG Output FET on-Resistance

IFLG = 10mA

-

25

40

IFOH

FLG Off Current

VFLG = 5V

-

0.01

1

µA

TBLANK

FLG Blanking and Latch-off Time

Assertion or deassertion due to overcurrent and over-

temperature condition

4

7

15

ms

TDIS

Discharge Time

CL= 1µF, VIN = 5V, disabled to VOUT < 0.5V

-

0.6

-

ms

RDIS

Discharge Resistance (Note 7)

VIN = 5V, disabled, IOUT = 1mA

-

105

-

TSHDN

Thermal Shutdown Threshold

Enabled

-

140

-

°C

THYS

Thermal Shutdown Hysteresis

-

-

20

-

°C

θJA

Thermal Resistance Junction-to-

Ambient

SO-8 (Note 8)

-

96

-

°C/W

MSOP-8 (Note 8)

-

130

-

°C/W

MSOP-8EP (Note 9)

-

92

-

°C/W

U-DFN3030-8 (Note 9)

-

84

-

°C/W

U-DFN2020-6 (Note 10)

-

90

-

°C/W

Notes:

6. Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account separately.

7. The discharge function is active when the device is disabled (when enable is de-asserted or during power-up power-down when VIN < VUVLO.

The discharge function offers a resistive discharge path for the external storage capacitor for limited time.

8. Device mounted on 2” x 2” FR-4 substrate PCB, 2oz copper, with minimum recommended pad layout.

9. Device mounted on 2” x 2” FR-4 substrate PCB, 2oz copper, with minimum recommended pad on top layer and thermal vias to bottom layer ground

plane.

10. Device mounted on 1"x1" FR-4 substrate PCB, 2oz copper, with minimum recommended padon top layer and thermal vias to bottom layer ground.