NVTYS010N06CL datasheet(1/5 Pages) LEIDITECH

部件名	NVTYS010N06CL

功能描述	60 N-Channel Enhancement Mode Power MOSFET

PDF	5 Pages

Scroll/Zoom	100%

制造商	LEIDITECH [Shanghai Leiditech Electronic Technology Co., Ltd]

网页	http://www.leiditech.com

标志

1 / 5 page

Description

The

uses advanced technology to provide

excellent RDS(ON), low gate charge and operation with

gate voltages as low as 4.5V. This device is suitable for

use as a Battery protection

or in other Switching application.

General Features

VDS = 60V ID =65A

RDS(ON) < 10mΩ @ VGS=10V (Type：7.5mΩ)

Application

Battery protection

Load switch

Uninterruptible power supply

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP65N06DF XXX YYYY

5000PCS

Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)

Symbol

Parameter

Value

Unit

VDS

Drain source voltage

60

V

VGS

Gate source voltage

±20

V

ID@TA=25℃

Continuous drain current

20

A

ID@TA=70℃

Continuous drain current

11

A

IDM

Pulsed drain current

60

A

PD@TA=25℃

Power dissipation

60

W

EAS

Single pulsed avalanche energy

30

mJ

TSTG

Storage Temperature Range

-55 to 150

℃

Tj

Operation and storage temperature

-55 to 150

℃

RθJC

Thermal resistance, junction-case

2.1

°C/W

RθJA

Thermal resistance, junction-ambient5)

85

°C/W

DFN3*3-8L

Enhancement Mode Power MOSFET

60 N-Channel

www.leiditech.com

Rev : 01.0 .2021

8

1/5

NVTYS010N06CL

类似零件编号 - NVTYS010N06CL

制造商	部件名	数据表	功能描述
ON Semiconductor	NVTYS010N06CL	340Kb / 7P	MOSFET - Power, Single N-Channel 60 V, 9.8 m, 51 A May, 2021 - Rev. 1
ON Semiconductor	NVTYS010N06CLTWG	340Kb / 7P	MOSFET - Power, Single N-Channel 60 V, 9.8 m, 51 A May, 2021 - Rev. 1

More results

类似说明 - NVTYS010N06CL

制造商	部件名	数据表	功能描述
GTM CORPORATION	G2N7002K	368Kb / 4P	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
	G111K	366Kb / 4P	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
	G138	324Kb / 4P	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
	G301K	296Kb / 4P	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
	G2304A	371Kb / 4P	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
	G2308E	330Kb / 4P	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Shanghai Leiditech Elec...	DMN6013LFGQ	1Mb / 5P	60 N-Channel Enhancement Mode Power MOSFET Rev : 01.0 8 .2021
	IAUZ40N06S5N050	1Mb / 5P	60 N-Channel Enhancement Mode Power MOSFET Rev : 01.0 8 .2021
	SQS164ELNW	1Mb / 5P	60 N-Channel Enhancement Mode Power MOSFET Rev : 01.0 8 .2021
	STL20N6F7	1Mb / 5P	60 N-Channel Enhancement Mode Power MOSFET Rev : 01.0 8 .2021

More results

NVTYS010N06CL 数据表(PDF) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd

NVTYS010N06CL 数据表(HTML) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd

类似零件编号 - NVTYS010N06CL

类似说明 - NVTYS010N06CL

Html Pages

1 2 3 4 5

数据表下载

链接网址

NVTYS010N06CL 数据表(PDF) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd

NVTYS010N06CL 数据表(HTML) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd

类似零件编号 - NVTYS010N06CL

类似说明 - NVTYS010N06CL

Html Pages

1 2 3 4 5

数据表 下载

链接网址

数据表下载