6.3

Electrical and timing characteristics

Unless otherwise specified: VDD = 5 V, TA = +25 °C, all voltages are referenced to GND.

Table 16. Electrical and timing characteristics

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

IDD(SRC)

Current consumption

Device attached

(connected, PD

communication, CCCV

regulating @20 V)

-40 °C < TA < +105 °C

720

900

1080

μA

ISTDBY

Standby

current consumption

Device idle (not

connected, no

communication, CCCV

regulating @5V)

-40 °C < TA < +105 °C

450

550

650

μA

TLOAD

I²C registers loading time

from NVM

At power-up or after a

reset

30

ms

VCONN power switches

RVCONN

VCONN power path

resistance

IVCONN = 0.050 A

-40 °C < TA < +105 °C

5

7.1

Ω

IOCP

Overcurrent protection

VCONN_VSYS = 3.3 V

70

80

90

mA

VOVP

Overvoltage protection

on CC output pins

5.8

6.0

6.2

V

VUVP

Undervoltage protection

on VCONN_VSYS input

pin

Rising

(typical hysteresis =

22.5 mV)

2.6

2.65

2.7

V

TSENSE detection threshold

Vth(T1)

Temperature safe

profile threshold

Rising Temperature

0.873

V

Falling Temperature

0.933

Vth(T2)

Power safe

profile threshold

Rising Temperature

0.713

V

Falling Temperature

0.791

Vth(T3)

Alert threshold

Rising Temperature

0.548

V

Falling Temperature

0.630

Digital input/output (SCL, SDA)

VIH

High level input voltage

1.2

V

VIL

Low level input voltage

0.35

V

VOL

Low level output voltage

Ioh = 3 mA

0.4

V

20 V open-drain ouputs (VBUS_EN_SRC)

VOL

Low level output voltage

Ioh = 3 mA

0.4

V

Discharge pins (VSENSE_DISCH, ISENSE_DISCH)

Imax (VSENSE_DISCH)

Maximum discharge

current

0.05

A

Imax (ISENSE_DISCH)

0.50

A

STUSB4761

Electrical and timing characteristics

DS13141 - Rev 3

page 20/29