数据搜索系统,热门电子元器件搜索
  Chinese  ▼
ALLDATASHEETCN.COM

X  

SH68N65DM6AG 数据表(PDF) 3 Page - STMicroelectronics

部件名 SH68N65DM6AG
功能描述  Automotive-grade N-channel 650 V, 35 m typ., 64 A MDmesh DM6 half-bridge topology Power MOSFET in an ACEPACK SMIT package
PDF  15 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

SH68N65DM6AG 数据表(HTML) 3 Page - STMicroelectronics

  SH68N65DM6AG Datasheet HTML 1Page - STMicroelectronics SH68N65DM6AG Datasheet HTML 2Page - STMicroelectronics SH68N65DM6AG Datasheet HTML 3Page - STMicroelectronics SH68N65DM6AG Datasheet HTML 4Page - STMicroelectronics SH68N65DM6AG Datasheet HTML 5Page - STMicroelectronics SH68N65DM6AG Datasheet HTML 6Page - STMicroelectronics SH68N65DM6AG Datasheet HTML 7Page - STMicroelectronics SH68N65DM6AG Datasheet HTML 8Page - STMicroelectronics SH68N65DM6AG Datasheet HTML 9Page - STMicroelectronics Next Button
Zoom Inzoom in Zoom Outzoom out
 3 / 15 page
background image
2
Electrical characteristics
TC = 25 °C unless otherwise specified
Table 4. On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source breakdown voltage
VGS = 0 V, ID = 1 mA
650
V
IDSS
Zero gate voltage drain current
VGS = 0 V, VDS = 650 V
5
μA
VGS = 0 V, VDS = 650 V, TC = 125 °C (1)
300
IGSS
Gate-body leakage current
VDS = 0 V, VGS = ±25 V
±5
μA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 μA
3.25
4
4.75
V
RDS(on)
Static drain-source on resistance
VGS = 10 V, ID = 23 A
35
41
1. Defined by design, not subject to production test.
Table 5. Dynamic characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Ciss
Input capacitance
VDS = 100 V, f = 1 MHz, VGS = 0 V
-
5900
-
pF
Coss
Output capacitance
-
260
-
Crss
Reverse transfer capacitance
-
2.6
-
Coss eq.(1)
Equivalent output capacitance
VDS = 0 to 520 V, VGS = 0 V
-
867
-
RG
Intrinsic gate resistance
f = 1 MHz, ID = 0 A
-
1.4
-
Ω
Qg
Total gate charge
VDD = 520 V, ID = 72 A, VGS = 0 to 10 V
(see Figure 13. Test circuit for gate
charge behavior)
-
116
-
nC
Qgs
Gate-source charge
-
37
-
Qgd
Gate-drain charge
-
45
-
1. Coss eq is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0
to 80% VDSS.
Table 6. Switching characteristics (resistive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on delay time
VDD = 325 V, ID = 36 A,
RG = 4.7 Ω , VGS = 10 V
(see Figure 12. Switching times
test circuit for resistive load and
Figure 17. Switching time waveform)
-
42
-
ns
tr
Rise time
-
19
-
ns
td(off)
Turn-off delay time
-
108
-
ns
tf
Fall time
-
11
-
ns
SH68N65DM6AG
Electrical characteristics
DS14027 - Rev 1
page 3/15



Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15


数据表 下载

Go To PDF Page


链接网址



ALLDATASHEET是否为您带来帮助?  [ DONATE ] 

关于 Alldatasheet   |   广告服务   |   联系我们   |   隐私政策   |   数据表链接    |   链接交换   |   制造商名单
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com