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SH68N65DM6AG 数据表(PDF) 3 Page - STMicroelectronics |
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SH68N65DM6AG 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 15 page ![]() 2 Electrical characteristics TC = 25 °C unless otherwise specified Table 4. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = 1 mA 650 V IDSS Zero gate voltage drain current VGS = 0 V, VDS = 650 V 5 μA VGS = 0 V, VDS = 650 V, TC = 125 °C (1) 300 IGSS Gate-body leakage current VDS = 0 V, VGS = ±25 V ±5 μA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 μA 3.25 4 4.75 V RDS(on) Static drain-source on resistance VGS = 10 V, ID = 23 A 35 41 mΩ 1. Defined by design, not subject to production test. Table 5. Dynamic characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Input capacitance VDS = 100 V, f = 1 MHz, VGS = 0 V - 5900 - pF Coss Output capacitance - 260 - Crss Reverse transfer capacitance - 2.6 - Coss eq.(1) Equivalent output capacitance VDS = 0 to 520 V, VGS = 0 V - 867 - RG Intrinsic gate resistance f = 1 MHz, ID = 0 A - 1.4 - Ω Qg Total gate charge VDD = 520 V, ID = 72 A, VGS = 0 to 10 V (see Figure 13. Test circuit for gate charge behavior) - 116 - nC Qgs Gate-source charge - 37 - Qgd Gate-drain charge - 45 - 1. Coss eq is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. Table 6. Switching characteristics (resistive load) Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VDD = 325 V, ID = 36 A, RG = 4.7 Ω , VGS = 10 V (see Figure 12. Switching times test circuit for resistive load and Figure 17. Switching time waveform) - 42 - ns tr Rise time - 19 - ns td(off) Turn-off delay time - 108 - ns tf Fall time - 11 - ns SH68N65DM6AG Electrical characteristics DS14027 - Rev 1 page 3/15 |
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