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ACS1026T 数据表(PDF) 5 Page - STMicroelectronics |
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ACS1026T 数据表(HTML) 5 Page - STMicroelectronics |
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5 / 11 page ![]() ACS102-6T 1 Characteristics 5/11 Figure 7. On-state characteristics (maximal values) Figure 8. SO-8 junction to ambient thermal resistance versus copper surface under tab (PCB FR4, copper thickness 35 µm) Figure 9. Relative variation of critical rate of decrease of main current (di/dt)c versus junction temperature Figure 10. Relative variation of critical rate of decrease of main current (di/dt)c vs (dV/dt)c, with turn-off time < 20 ms Figure 11. Relative variation of static dV/dt versus junction temperature Figure 12. Relative variation of the maximal clamping voltage versus junction temperature (min value) 0.01 0.10 1.00 10.00 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 ITM(A) T j max.: V to= 0.8 V R d= 500 mΩ Tj=25°C Tj=125°C VTM(V) 0 20 40 60 80 100 120 140 160 0 50 100 150 200 250 300 R th(j-a)(°C/W) SO-8 SCU(mm²) (dI/dt) [T ] / (dI/dt) [T =125 °C] cc jj 0 2 4 6 8 10 12 14 16 18 20 55 65 75 85 95 105 115 125 T (°C) j V out = 400 V (dI/dt) c [(dV/dt) c ] / Specified (dI/dt)c 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.1 1 10 100 (dV/dt)c (V/µs) V out = 400 V 0 1 2 3 4 5 6 7 8 25 50 75 100 125 dV/dt [Tj]/ dV/dt[T j=125°C] V out=400V Tj(°C) 0.50 0.60 0.70 0.80 0.90 1.00 1.10 1.20 -25 0 25 50 75 100 125 V CL [Tj]/ VDRM Tj(°C) |
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