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STR2P3LLH6 数据表(PDF) 3 Page - Shanghai Leiditech Electronic Technology Co., Ltd

部件名 STR2P3LLH6
功能描述  P-Channel Enhancement Mode Power MOSFET
PDF  6 Pages
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制造商  LEIDITECH [Shanghai Leiditech Electronic Technology Co., Ltd]
网页  http://www.leiditech.com
标志 LEIDITECH - Shanghai Leiditech Electronic Technology Co., Ltd

STR2P3LLH6 数据表(HTML) 3 Page - Shanghai Leiditech Electronic Technology Co., Ltd

  STR2P3LLH6 Datasheet HTML 1Page - Shanghai Leiditech Electronic Technology Co., Ltd STR2P3LLH6 Datasheet HTML 2Page - Shanghai Leiditech Electronic Technology Co., Ltd STR2P3LLH6 Datasheet HTML 3Page - Shanghai Leiditech Electronic Technology Co., Ltd STR2P3LLH6 Datasheet HTML 4Page - Shanghai Leiditech Electronic Technology Co., Ltd STR2P3LLH6 Datasheet HTML 5Page - Shanghai Leiditech Electronic Technology Co., Ltd STR2P3LLH6 Datasheet HTML 6Page - Shanghai Leiditech Electronic Technology Co., Ltd  
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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
2
10
0
40
0
0
5
5
1
10
0
1
15
5
2
20
0
0
0
0
0..5
5
1
1
1
1..5
5
2
2
2
2..5
5
3
3
--V
V
G
GS
S(Vo
(Vollts
ts))
F
Fiig
gu
urre
e 2
2:: T
Trra
an
ns
sfe
ferr C
Ch
ha
arra
ac
cte
terriis
sti
tic
cs
s (N
(No
ote
te E)
E)
2
20
0
4
40
0
6
60
0
8
80
0
1
10
00
0
0
0
2
2
4
4
6
6
8
8
1
10
0
-I
-I
D
D (A
(A))
F
Fiig
gu
urre
e 3
3:: O
On
n-R
-Re
es
siis
sta
tan
nc
ce
e v
vs
s.. D
Drra
aiin
n C
Cu
urrrre
en
ntt a
an
nd
d G
Ga
ate
te
Vo
Vollta
tag
ge
e (N
(No
ote
te E)
E)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-V
SD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
25°C
125°C
0
0..8
8
1
1
1
1..2
2
1
1..4
4
1
1..6
6
1
1..8
8
0
0
2
25
5
5
50
0
7
75
5
1
10
00
0
1
12
25
5
1
15
50
0
1
17
75
5
T
Te
em
mp
pe
erra
atu
turre
e (°
(°C
C))
n
n
18T
T
F
Fiig
gu
urre
e 4
4:: O
On
n-R
-Re
es
siis
sta
tan
nc
ce
e v
vs
s.. J
Ju
un
nc
cti
tio
o
e
em
mp
pe
erra
atu
turre
e
(N
(No
ote
te E)
E)
V
V
G
GS
S=
=-2
-2..5
5V
V
II
D
D=
=-2
-2A
A
V
V
G
GS
S=
=-1
-10
0V
V
II
D
D=
=-4
-4A
A
V
V
G
GS
S=
=-4
-4..5
5
17
V
V
II
D
D=
=-3
-3..7
7A
A
30
50
70
90
110
130
150
0
2
4
6
8
10
-V
GS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
2
25
5°
°C
C
1
12
25
5°
°C
C
V
V
D
DS
S=
=-5
-5V
V
V
V
G
GS
S=
=-4
-4..5
5V
V
V
V
G
GS
S=
=-1
-10
0V
V
I
D=-4A
25°C
125°C
0
0
5
5
1
10
0
1
15
5
2
20
0
2
25
5
0
0
1
1
2
2
3
3
4
4
5
5
--V
V
D
DS
S (Vo
(Vollts
ts))
F
Fiig
g 1
1:: O
On
n-R
-Re
eg
giio
on
n C
Ch
ha
arra
ac
cte
terriis
sti
tic
cs
s (N
(No
ote
te E)
E)
V
V
G
GS
S=
=-2
-2..0
0V
V
--2
2..5
5V
V
1
10
0V
V
4
4..5
5V
V
V
V
G
GS
S=
=-2
-2..5
5V
V
Rev :
www.leiditech.com
01.06.2018
3/6
STR2P3LLH6



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