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STL9P4LF6AG 数据表(PDF) 2 Page - STMicroelectronics |
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STL9P4LF6AG 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 12 page ![]() 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage -40 V VGS Gate-source voltage ±18 V ID(1) Drain current (continuous) at TC = 25 °C -8 A Drain current (continuous) at TC = 100 °C -5 ID(2) Drain current (continuous) at TC = 25 °C -31 A Drain current (continuous) at TC = 100 °C -20 IDM(1)(3) Drain current (pulsed) -32 A PTOT(1) Total power dissipation at TC = 25 °C 2.9 W PTOT(2) Total power dissipation at TC = 25 °C 50 W Tstg Storage temperature -55 to 150 °C TJ Maximum junction temperature 1. The value is rated according to Rthj-pcb. 2. The value is rated according to Rth-jC. 3. Pulse width limited by safe operating area. Table 2. Thermal data Symbol Parameter Value Unit RthJC Thermal resistance, junction-to-case max. 2.5 °C/W RthJB(1) Thermal resistance, junction-to-board, single operation 42.8 °C/W 1. When mounted on FR-4 board of 1 inch², 2oz Cu, steady state. STL9P4LF6AG Electrical ratings DS13399 - Rev 2 page 2/12 |
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