STWA68N65DM6AG datasheet(2/12 Pages) STMICROELECTRONICS

部件名	STWA68N65DM6AG

功能描述	Automotive-grade N-channel 650 V, 33 m typ., 72 A MDmesh DM6 Power MOSFET in a TO-247 long leads package

PDF	12 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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Electrical ratings

Table 1. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage

±25

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC = 100 °C

IDM (1)

Drain current (pulsed)

280

PTOT

Total power dissipation at TC = 25 °C

480

dv/dt (2)

Peak diode recovery voltage slope

100

V/ns

di/dt (2)

Peak diode recovery current slope

1000

A/μs

dv/dt (3)

MOSFET dv/dt ruggedness

100

V/ns

TSTG

Storage temperature range

-55 to 150

°C

Operating junction temperature range

°C

1. Pulse width limited by safe operating area.

2. ISD ≤ 72 A, VDS (peak) < V(BR)DSS, VDD = 400 V.

3. VDS ≤ 520 V.

Table 2. Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case

0.26

°C/W

Rthj-amb

Thermal resistance junction-ambient

°C/W

Table 3. Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not repetitive (tp limited by TJ max)

EAS

Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR)

1.9

STWA68N65DM6AG

Electrical ratings

DS13422 - Rev 1

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