VS-5.MT...KPbF, VS-9.MT...KPbF, VS-11.MT...KPbF Series

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Vishay Semiconductors

Revision: 28-Nov-2019

2

Document Number: 94353

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Note

(1) Available with dV/dt = 1000 V/μs, to complete code add S90 i. e. 113MT160KBS90

FORWARD CONDUCTION

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

5.MT...K

VALUES

9.MT...K

VALUES

11.MT...K

UNITS

Maximum DC output current at

case temperature

IO

120° rect. conduction angle

55

90

110

A

85

85

85

°C

Maximum peak, one-cycle

forward, non-repetitive on state

surge current

ITSM

t = 10 ms

No voltage

reapplied

Initial TJ = TJ max.

390

950

1130

A

t = 8.3 ms

410

1000

1180

t = 10 ms

100 % VRRM

reapplied

330

800

950

t = 8.3 ms

345

840

1000

Maximum I2t for fusing

I2t

t = 10 ms

No voltage

reapplied

770

4525

6380

A2s

t = 8.3 ms

700

4130

5830

t = 10 ms

100 % VRRM

reapplied

540

3200

4510

t = 8.3 ms

500

2920

4120

Maximum I2

√t for fusing

I2

√t

t = 0.1 ms to 10 ms, no voltage reapplied

7700

45 250

63 800

A2

√s

Low level value of threshold

voltage

VT(TO)1

(16.7 % x

π x IT(AV) < I < π x IT(AV)), TJ maximum

1.17

1.09

1.04

V

High level value of threshold

voltage

VT(TO)2

(I >

π x IT(AV)), TJ maximum

1.45

1.27

1.27

Low level value on-state slope

resistance

rt1

(16.7 % x

π x IT(AV) < I < π x IT(AV)), TJ maximum

12.40

4.10

3.93

m

Ω

High level value on-state slope

resistance

rt2

(I >

π x IT(AV)), TJ maximum

11.04

3.59

3.37

Maximum on-state voltage drop

VTM

Ipk = 150 A, TJ = 25 °C, tp = 400 μs single junction

2.68

1.65

1.57

V

Maximum non-repetitive

rate of rise of turned on current

dI/dt

TJ = 25 °C, from 0.67 VDRM, ITM =

π x IT(AV),

Ig = 500 mA, tr < 0.5 μs, tp > 6 μs

150

A/μs

Maximum holding current

IH

TJ = 25 °C, anode supply = 6 V, resistive load,

gate open circuit

200

mA

Maximum latching current

IL

TJ = 25 °C, anode supply = 6 V, resistive load

400

BLOCKING

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

5.MT...K

VALUES

9.MT...K

VALUES

11.MT...K

UNITS

RMS isolation voltage

VISOL

TJ = 25 °C all terminal shorted, f = 50 Hz, t = 1 s

4000

V

Maximum critical rate of rise of

off-state voltage

dV/dt (1)

TJ = TJ maximum, linear to 0.67 VDRM,

gate open circuit

500

V/μs

TRIGGERING

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

5.MT...K

VALUES

9.MT...K

VALUES

11.MT...K

UNITS

Maximum peak gate power

PGM

TJ = TJ maximum

10

W

Maximum average gate power

PG(AV)

2.5

Maximum peak gate current

IGM

2.5

A

Maximum peak negative

gate voltage

- VGT

10

V

Maximum required DC gate

voltage to trigger

VGT

TJ = -40 °C

Anode supply = 6 V,

resistive load

4.0

TJ = 25 °C

2.5

TJ = 125 °C

1.7

Maximum required DC gate

current to trigger

IGT

TJ = -40 °C

270

mA

TJ = 25 °C

150

TJ = 125 °C

80

Maximum gate voltage

that will not trigger

VGD

TJ = TJ maximum, rated VDRM applied

0.25

V

Maximum gate current

that will not trigger

IGD

6mA