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STFU16N65M2 数据表(PDF) 7 Page - STMicroelectronics

部件名 STFU16N65M2
功能描述  N-channel 650 V, 0.32 typ., 11 A MDmesh™ M2 Power MOSFET in a TO-220FP ultra narrow leads package
PDF  12 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STFU16N65M2 数据表(HTML) 7 Page - STMicroelectronics

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STFU16N65M2
Electrical characteristics
DocID030485 Rev 1
7/12
Figure 8: Gate charge vs. gate-source voltage
Figure 9: Capacitance variations
Figure 10: Normalized gate threshold voltage vs.
temperature
Figure 11: Normalized on-resistance vs. temperature
Figure 12: Source-drain diode forward
characteristics
Figure 13: Output capacitance stored energy
VGS
4
2
0
4
12
Qg(nC)
8
(V)
0
16
6
8
10
20
VDS (V)
0
100
200
300
400
500
VDD = 520 V
ID = 11 A
VDS
GIPD221020141708FSR
C
10
1
0.1
1
100
VDS(V)
10
(pF)
0.1
100
1000
Ciss
Coss
Crss
GIPD221020141716FSR
VGS(th)
0.8
-75
-25
25
Tj(°C)
(norm)
0.6
75
0.7
0.9
1.0
125
1.1
ID = 250 µ A
GIPD180920141442FSR
VSD
0.7
0
2
6
ISD(A)
4
(V)
0.5
8
0.6
0.8
0.9
Tj= 150°C
Tj= -50°C
Tj= 25°C
10
1
1.1
GIPD221020141733FSR
E
1
0
100
300
VDS(V)
200
(µJ)
0
400
500
600
2
3
4
5
GIPD221020141721FSR



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