March 2017

DocID028178 Rev 2

1/16

This is information on a product in full production.

www.st.com

STP26N60M2, STW26N60M2

N-channel 600

V, 0.14 Ω typ., 20 A MDmesh™ M2

Power MOSFETs in TO-220 and TO-247 packages

Datasheet - production data

Figure 1: Internal schematic diagram

Features

Order code

max.

STP26N60M2

650 V

0.165 Ω

20 A

169 W

STW26N60M2



Extremely low gate charge





100% avalanche tested



Zener-protected

Applications



Switching applications

Description

These devices are N-channel Power MOSFETs

developed using MDmesh™ M2 technology.

Thanks to their strip layout and improved vertical

structure, these devices exhibit low on-resistance

and optimized switching characteristics,

rendering them suitable for the most demanding

high efficiency converters.

Table 1: Device summary

Order code

Marking

Package

Packing

STP26N60M2

26N60M2

TO-220

Tube

STW26N60M2

TO-247

1

2

3

TO-247

1

2

3

TAB

TO-220