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STP33N60DM6 数据表(PDF) 1 Page - STMicroelectronics |
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STP33N60DM6 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 12 page ![]() 1 2 3 TO-220 TAB D(2, TAB) G(1) S(3) AM01475V1 Features Order code VDS RDS(on) max. ID STP33N60DM6 600 V 128 mΩ 25 A • Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100% avalanche tested • Extremely high dv/dt ruggedness • Zener-protected • High-creepage package Applications • Switching applications Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast- recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters. Product status link STP33N60DM6 Product summary Order code STP33N60DM6 Marking 33N60DM6 Package TO-220 Packing Tube N-channel 600 V, 115 mΩ typ., 25 A, MDmesh™ DM6 Power MOSFET in a TO ‑220 package STP33N60DM6 Datasheet DS12878 - Rev 3 - May 2020 For further information contact your local STMicroelectronics sales office. www.st.com |
类似零件编号 - STP33N60DM6 |
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类似说明 - STP33N60DM6 |
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