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STP35N65DM2 数据表(PDF) 4 Page - STMicroelectronics

部件名 STP35N65DM2
功能描述  N-channel 650 V, 0.093 typ., 32 A MDmesh™ DM2 Power MOSFET in a TO-220 package
PDF  13 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STP35N65DM2 数据表(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STP35N65DM2
4/13
DocID030872 Rev 2
2
Electrical characteristics
(Tcase = 25 °C unless otherwise specified)
Table 5: Static
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source breakdown
voltage
VGS = 0 V, ID = 1 mA
650
V
IDSS
Zero gate voltage drain
current
VGS = 0 V, VDS = 650 V
1
µA
VGS = 0 V, VDS = 650 V,
Tcase = 125 °C(1)
100
IGSS
Gate-body leakage
current
VDS = 0 V, VGS = ±25 V
±5
µA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
3
4
5
V
RDS(on)
Static drain-source on-
resistance
VGS = 10 V, ID = 16 A
0.093
0.110
Ω
Notes:
(1)Defined by design, not subject to production test.
Table 6: Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Ciss
Input capacitance
VDS = 100 V, f = 1 MHz,
VGS = 0 V
-
2540
-
pF
Coss
Output capacitance
-
115
-
Crss
Reverse transfer
capacitance
-
2.5
-
Coss eq.(1)
Equivalent output
capacitance
VDS = 0 to 520 V, VGS = 0 V
-
204
-
pF
RG
Intrinsic gate resistance
f = 1 MHz, ID = 0 A
-
4.2
-
Ω
Qg
Total gate charge
VDD = 520 V, ID = 32 A, VGS = 0
to 10 V (see Figure 15: "Test
circuit for gate charge behavior")
-
56.3
-
nC
Qgs
Gate-source charge
-
12.7
-
Qgd
Gate-drain charge
-
27.6
-
Notes:
(1)Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS.
Table 7: Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on delay time
VDD = 325 V, ID = 16 A, RG = 4.7
Ω,
VGS = 10 V (see Figure 14: "Test
circuit for resistive load switching
times" and Figure 19: "Switching
time waveform")
-
23.4
-
ns
tr
Rise time
-
23
-
td(off)
Turn-off delay time
-
72
-
tf
Fall time
-
10.4
-



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