STP65N045M9 datasheet(4/12 Pages) STMICROELECTRONICS

部件名	STP65N045M9

功能描述	N-channel 650 V, 39 mΩ typ., 55 A MDmesh M9 Power MOSFET in a TO-220 package

PDF	12 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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Table 7. Source-drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD(1)

Source-drain current

ISDM(2)

Source-drain current (pulsed)

170

VSD(3)

Forward on voltage

ISD = 55 A, VGS = 0 V

1.5

trr

Reverse recovery time

ISD = 55 A, di/dt = 100 A/µs,

VDD = 100 V

(see Figure 16. Test circuit for inductive

load switching and diode recovery times)

288

Qrr

Reverse recovery charge

µC

IRRM

Reverse recovery current

trr

Reverse recovery time

ISD = 55 A, di/dt = 100 A/µs,

VDD = 100 V, TJ = 150 °C

(see Figure 16. Test circuit for inductive

load switching and diode recovery times)

400

Qrr

Reverse recovery charge

7.5

µC

IRRM

Reverse recovery current

1. Limited by maximum junction temperature.

2. Pulse width is limited by safe operating area.

3. Pulsed: pulse duration = 300 µs, duty cycle 1.5%.

STP65N045M9

Electrical characteristics

DS13506 - Rev 4

page 4/12

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