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STWA67N60DM6 数据表(PDF) 3 Page - STMicroelectronics

部件名 STWA67N60DM6
功能描述  N-channel 600 V, 45 m typ., 58 A MDmesh DM6 Power MOSFET in a TO‑247 long leads package
PDF  12 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STWA67N60DM6 数据表(HTML) 3 Page - STMicroelectronics

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Electrical characteristics
TC = 25 °C unless otherwise specified
Table 4. On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source breakdown voltage
VGS = 0 V, ID = 1 mA
600
V
IDSS
Zero gate voltage drain current
VGS = 0 V, VDS = 600 V
1
μA
VGS = 0 V, VDS = 600 V,
TC = 125 °C(1)
100
IGSS
Gate-body leakage current
VDS = 0 V, VGS = ±25 V
±5
μA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 μA
3.25
4
4.75
V
RDS(on)
Static drain-source on-resistance
VGS = 10 V, ID= 29 A
45
54
mΩ
1. Defined by design, not subject to production test.
Table 5. Dynamic characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Ciss
Input capacitance
VDS = 100 V, f = 1 MHz,
VGS = 0 V
-
3400
-
pF
Coss
Output capacitance
-
280
-
Crss
Reverse transfer capacitance
-
2
-
Coss eq.(1)
Equivalent output capacitance
VDS = 0 to 480 V, VGS = 0 V
-
520
-
RG
Intrinsic gate resistance
f = 1 MHz, ID = 0 A
-
1.5
-
Ω
Qg
Total gate charge
VDD = 480 V, ID = 52 A,
VGS = 0 to 10 V
(see Figure 14. Test circuit for gate
charge behavior).
-
72.5
-
nC
Qgs
Gate-source charge
-
24.5
-
Qgd
Gate-drain charge
-
28.5
-
1. Coss eq is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0
to 80% VDSS.
Table 6. Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on delay time
VDD = 300 V,
ID = 23.75 A, RG = 4.7 Ω,
VGS = 10 V
(see Figure 13. Test circuit for
resistive load switching times and
Figure 18. Switching time waveform)
-
24.5
-
ns
tr
Rise time
-
32
-
ns
td(off)
Turn-off delay time
-
87.5
-
ns
tf
Fall time
-
8.6
-
ns
STWA67N60DM6
Electrical characteristics
DS12933 - Rev 4
page 3/12



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