STWA70N60DM2 datasheet(3/12 Pages) STMICROELECTRONICS

部件名	STWA70N60DM2

功能描述	N-channel 600 V, 0.037 typ., 66 A MDmesh™ DM2 Power MOSFET in a TO-247 long leads package

PDF	12 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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STWA70N60DM2

Electrical ratings

DocID027892 Rev 2

3/12

Electrical ratings

Table 2: Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage

±25

Drain current (continuous) at Tcase = 25 °C

Drain current (continuous) at Tcase = 100 °C

IDM

(1)

Drain current (pulsed)

264

PTOT

Total dissipation at Tcase = 25 °C

446

dv/dt

(2)

Peak diode recovery voltage slope

V/ns

dv/dt

(3)

MOSFET dv/dt ruggedness

Tstg

Storage temperature

-55 to 150

°C

Operating junction temperature

Notes:

(1)

Pulse width is limited by safe operating area.

(2)

ISD

≤ 66 A, di/dt=900 A/μs; VDS peak < V(BR)DSS, VDD = 400 V.

(3)

VDS

≤ 480 V.

Table 3: Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case

0.28

°C/W

Rthj-amb

Thermal resistance junction-ambient

Table 4: Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not repetitive (Pulse width limited by Tjmax)

EAR

Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V)

1500

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