STF7N60DM2 datasheet(5/13 Pages) STMICROELECTRONICS

部件名	STF7N60DM2

功能描述	N-channel 600 V, 0.78 typ., 6 A MDmesh™ DM2 Power MOSFET in a TO-220FP package

PDF	13 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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5 / 13 page

STF7N60DM2

Electrical characteristics

DocID030790 Rev 1

5/13

Table 8: Source-drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain current

ISDM(1)

Source-drain current

(pulsed)

VSD(2)

Forward on voltage

VGS = 0 V, ISD = 6 A

1.6

trr

Reverse recovery time

ISD = 6 A, di/dt = 100 A/µs,

VDD = 60 V

(see Figure 16: "Test circuit for

inductive load switching and

diode recovery times")

Qrr

Reverse recovery

charge

164

IRRM

Reverse recovery

current

4.8

trr

Reverse recovery time

ISD = 6 A, di/dt = 100 A/µs,

VDD = 60 V, Tj = 150 °C

(see Figure 16: "Test circuit for

inductive load switching and

diode recovery times")

144

Qrr

Reverse recovery

charge

492

IRRM

Reverse recovery

current

6.8

Notes:

(1) Pulse width is limited by safe operating area.

(2) Pulse test: pulse duration = 300 µs, duty cycle 1.5%.

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