STFU9N65M2 datasheet(2/12 Pages) STMICROELECTRONICS

部件名	STFU9N65M2

功能描述	N-channel 650 V, 0.79 typ., 5 A MDmesh M2 Power MOSFET in a TO-220FP ultra narrow leads package

PDF	12 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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Electrical ratings

Table 1. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage

±25

ID (1)

Drain current (continuous) at TC = 25 °C

ID (1)

Drain current (continuous) at TC = 100 °C

3.2

IDM (2)

Drain current pulsed

PTOT

Total power dissipation at TC = 25 °C

VISO

Insulation withstand voltage (RMS) from all three leads to external heat sink

(t = 1 s; TC = 25 °C)

2.5

dv/dt (3)

Peak diode recovery voltage slope

V/ns

dv/dt (4)

MOSFET dv/dt ruggedness

Operating junction temperature range

-55 to 150

°C

Tstg

Storage temperature range

1. Current limited by package.

2. Pulse width limited by safe operating area.

3. ISD ≤ 5 A, di/dt ≤ 400 A/μs, VDS(peak) ≤ V(BR)DSS, VDD = 400 V.

4. VDS ≤ 520 V.

Table 2. Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case

6.25

°C/W

Rthj-amb

Thermal resistance junction-ambient

62.5

°C/W

Table 3. Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not repetitive (pulse width limited by TJ max)

EAS

Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR, VDD = 50 V)

105

STFU9N65M2

Electrical ratings

DS11781 - Rev 3

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