STL10N65M2 datasheet(2/15 Pages) STMICROELECTRONICS

部件名	STL10N65M2

功能描述	N-channel 650 V, 0.85 typ., 4.5 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV package

PDF	15 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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Electrical ratings

Table 1. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage

±25

Drain current (continuous) at TC = 25 °C

4.5

Drain current (continuous) at TC = 100 °C

2.8

IDM (1)

Drain current pulsed

PTOT

Total power dissipation at TC = 25 °C

IAR

Avalanche current, repetitive or non-repetitive (pulse width limited by TJ max)

0.9

EAS

Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR, VDD = 50 V)

dv/dt (2)

Peak diode recovery voltage slope

V/ns

dv/dt (3)

MOSFET dv/dt ruggedness

Operating junction temperature range

-55 to 150

°C

Tstg

Storage temperature range

1. Pulse width is limited by safe operating area.

2. ISD ≤ 4.5 A, di/dt ≤ 400 A/μs, VDS(peak) ≤ V(BR)DSS, VDD = 400 V.

3. VDS ≤ 520 V.

Table 2. Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case

2.6

°C/W

Rthj-pcb (1)

Thermal resistance junction-pcb

°C/W

1. When mounted on 1 inch² FR-4 board, 2 oz Cu.

STL10N65M2

Electrical ratings

DS12063 - Rev 2

page 2/15

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