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STL22N60DM6 数据表(PDF) 1 Page - STMicroelectronics |
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STL22N60DM6 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 14 page ![]() 5 1 2 3 4 PowerFLAT 8x8 HV NG1DS2PS34D5Z Drain(5) Gate(1) Driver source (2) Power source (3, 4) Features Order code VDS RDS(on) max. ID STL22N60DM6 600 V 265 mΩ 13 A • Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100% avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Applications • Switching applications Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast- recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters. Product status link STL22N60DM6 Product summary Order code STL22N60DM6 Marking 22N60DM6 Package PowerFLAT 8x8 HV Packing Tape and reel N-channel 600 V, 220 mΩ typ., 13 A, MDmesh DM6 Power MOSFET in a PowerFLAT 8x8 HV package STL22N60DM6 Datasheet DS13914 - Rev 1 - February 2022 For further information contact your local STMicroelectronics sales office. www.st.com |
类似零件编号 - STL22N60DM6 |
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类似说明 - STL22N60DM6 |
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