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STL24N65M2 数据表(PDF) 1 Page - STMicroelectronics |
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STL24N65M2 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 15 page ![]() November 2014 DocID027182 Rev 1 1/15 This is information on a product in full production. www.st.com STL24N65M2 N- channel 650 V, 0.205 Ω typ., 14 A MDmesh M2 Power MOSFET in a PowerFLAT™ 8x8 HV package Datasheet - production data Figure 1: Internal schematic diagram Features Order codes VDS RDS(on) max ID STL24N65M2 650 V 0.250 Ω 14 A Extremely low gate charge Excellent output capacitance (Coss) profile 100% avalanche tested Zener-protected Applications Switching applications Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. Table 1: Device summary Order codes Marking Package Packaging STL24N65M2 24N65M2 PowerFLAT™ 8x8 HV Tape and reel S(3) S(3) S(3) G(1) D(2) PowerFLA T™ 8x8 HV D(3) G(1) S(2) AM01476v6 |
类似零件编号 - STL24N65M2 |
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类似说明 - STL24N65M2 |
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