STL26N65DM2 datasheet(2/15 Pages) STMICROELECTRONICS

部件名	STL26N65DM2

功能描述	N-channel 650 V, 0.182 typ., 20 A, MDmesh™ DM2 Power MOSFET in a PowerFLAT™ 8x8 HV package

PDF	15 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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2 / 15 page

Electrical ratings

Table 1. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage

±25

Drain current (continuous) at Tcase = 25 °C

Drain current (continuous) at Tcase = 100 °C

12.6

IDM(1)

Drain current (pulsed)

PTOT

Total dissipation at Tcase = 25 °C

140

dv/dt(2)

Peak diode recovery voltage slope

V/ns

dv/dt(3)

MOSFET dv/dt ruggedness

Tstg

Storage temperature range

-55 to 150

°C

Operating junction temperature range

1. Pulse width is limited by safe operating area.

2. ISD ≤ 20 A, di/dt=900 A/μs, VDD = 400 V, VDS(peak) < V(BR)DSS

3. VDS ≤ 520 V

Table 2. Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case

0.89

°C/W

Rthj-pcb(1)

Thermal resistance junction-pcb

1. When mounted on an 1-inch² FR-4, 2oz Cu board

Table 3. Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR(1)

Avalanche current, repetitive or not repetitive

EAS(2)

Single pulse avalanche energy

530

1. Pulse width limited by Tjmax

2. Starting Tj = 25 °C, ID = IAR, VDD = 50 V

STL26N65DM2

Electrical ratings

DS12623 - Rev 1

page 2/15

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