STL28N60DM2 datasheet(3/15 Pages) STMICROELECTRONICS

部件名	STL28N60DM2

功能描述	N-channel 600 V, 0.155 typ., 21 A MDmesh™ DM2 Power MOSFET in a PowerFLAT™ 8x8 HV package

PDF	15 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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3 / 15 page

STL28N60DM2

Electrical ratings

DocID026786 Rev 2

3/15

Electrical ratings

Table 2: Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage

±25

ID(1)

Drain current (continuous) at Tcase = 25 °C

Drain current (continuous) at Tcase = 100 °C

IDM(1)(2)

Drain current (pulsed)

PTOT(1)

Total dissipation at Tcase = 25 °C

140

dv/dt(3)

Peak diode recovery voltage slope

V/ns

dv/dt(4)

MOSFET dv/dt ruggedness

V/ns

Tstg

Storage temperature

-55 to 150

°C

Operating junction temperature

Notes:

(1) The value is limited by package.

(2) Pulse width limited by safe operating area.

(3) ISD ≤ 21 A, di/dt ≤ 900 A/μs, VDD = 400 V, VDS(peak) < V(BR)DSS.

(4) VDS ≤ 480 V.

Table 3: Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case

0.89

°C/W

Rthj-amb(1)

Thermal resistance junction-ambient

Notes:

(1) When mounted on a 1-inch² FR-4, 2oz Cu board.

Table 4: Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR(1)

Avalanche current, repetitive or not repetitive

EAS(2)

Single pulse avalanche energy

350

Notes:

(1) Pulse width limited by Tjmax.

(2) starting Tj = 25 °C, ID = IAR, VDD = 50 V.

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