ZXGD3003E6Q

Document Number DS40797 Rev. 2 - 2

3 of 8

www.diodes.com

February 2020

© Diodes Incorporated

ZXGD3003E6Q

Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Supply Voltage, with Respect to VEE

VCC

40

V

Input Voltage, with Respect to VEE

VIN

40

V

Output Difference Voltage (Source - Sink)

V(source-sink)

±7

V

Peak Pulsed Output Current (Source - Sink)

IOM

±5

A

Peak Pulsed Input Current

IIN1, IIN2

±1

A

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Power Dissipation (Notes 5 & 6)

Linear Derating Factor

PD

1.1

8.8

W

mW/°C

Thermal Resistance, Junction to Ambient (Notes 5 & 6)

RθJA

113

°C/W



Thermal Resistance, Junction to Lead (Note 7)

RθJL

105

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

ESD Ratings (Note 8)

Characteristic

Symbol

Value

Unit

JEDEC Class

Electrostatic Discharge - Human Body Model

ESD HBM

4,000

V

3A

Electrostatic Discharge - Machine Model

ESD MM

400

V

C

Electrostatic Discharge

– Charged Device Model

ESD CDM

1,000

V

IV

Notes:

5. For a device mounted on 25mm x 25mm 1oz copper that is on a single-sided 1.6mm FR-4 PCB; device is measured under still air conditions whilst

operating in a steady-state. The heatsink is split in half with the pin 1 (VCC) and pin 3 (VEE) connected separately to each half.

6. For device with two active die running at equal power.

7. Thermal resistance from junction to solder-point at the end of each lead on pin 1 (VCC) and pin 3 (VEE).

8. Refer to JEDEC specification JESD22-A114, JESD22-A115 and JESD22-C101.