Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099

Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com

Characteristic Data and Specifications are subject to change without notice.

©

2005 Mimix Broadband, Inc.

Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept

their obligation to be compliant with U.S. Export Laws.

May 2005 - Rev 05-May-05

Units

GHz

dBm

dBc/Hz

dBc/Hz

dBc

dBc

dBc

MHz/Volt

VDC

VDC

mA

Min.

6.8

-

-

-

-

-

-

-

-

+0.0

-

Typ.

-

+4.5

-97.0

-118.0

-23.0

-30.0

-40.0

60.0

-5.0

-

20

Max.

7.9

-

-

-

-

-

-

-

-

+6.0

25

6.8-7.9 GHz GaAs MMIC

Voltage Controlled Oscillator

Page 1 of 5

Features

On-Chip Resonator

+4.5 dBm Output Power

-97 dBc/Hz @ 100KHz Phase Noise

20mA @ -5.0V Bias Supply

100% On-Wafer, DC and Output Power Testing

100% Visual Inspection to MIL-STD-883

Method 2010

General Description

Parameter

Supply Voltage (Vee1,2,3)

Supply Voltage (Vtune)

Supply Current (Iee1,2,3)

Supply Current (Itune)

Storage Temperature (Tstg)

Operating Temperature (Ta)

Junction Temperature (Tjn)

-6.0 VDC

+6.0 VDC

30 mA

1 mA

-55 to MTTF Table

MTTF Table

Chip Device Layout

(1) Junction temperature affects a device's MTTF. It is

recommended to keep channel temperature as low as

possible for maximum life.

1

1

Mimix Broadband's 6.8-7.9 GHz GaAs HBT VCO is a fully

integrated oscillator MMIC with on-chip tuning diode and

resonator. This design is based on a cross coupled differential

pair with on-chip buffer amplifier and output balun. The use of

a high-Q resonator structure and integrated varactor diodes

results in optimum phase-noise performance. This MMIC uses

Mimix Broadband's 2 um GaAs HBT device model technology

to ensure low flicker (1/f ) noise and high reliability. The chip

has surface passivation to protect and provide a rugged part

with backside via holes and gold metallization to allow either a

conductive epoxy or eutectic solder die attach process. This

device is well suited for Millimeter-wave Point-to-Point Radio,

LMDS, SATCOM and VSAT applications.

Electrical Characteristics (Ambient Temperature T = 25

o

C)

Absolute Maximum Ratings

Frequency Range (f )

Fundamental Output Power (Pout)

SSB Phase Noise @ 100 kHz Offset

SSB Phase Noise @ 1 MHz Offset

2nd Harmonic Suppression

3rd Harmonic Suppression

4th Harmonic Suppression

Frequency Pushing (Vee)

Supply Voltage (Vee)

Frequency Tuning Voltage (Vtune)

Supply Current (Iee) (Vee=-5.0V Typical)

7OSC0463