SFH1617A

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Vishay Semiconductors

Rev. 2.1, 10-May-17

2

Document Number: 83552

For technical questions, contact: optocoupleranswers@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not

implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute

maximum ratings for extended periods of the time can adversely affect reliability

(1) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through

hole devices (DIP)

Note

• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering

evaluation. Typical values are for information only and are not part of the testing requirements

ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

INPUT

Reverse voltage

VR

6.0

V

DC forward current

IF

60

mA

Surge forward current

t

≤ 10 μs

IFSM

2.5

A

LED power dissipation

Pdiss

70

mW

OUTPUT

Collector emitter voltage

VCEO

70

V

Emitter collector voltage

VECO

7.0

V

Collector current

IC

50

mA

Collector peak current

tp/T = 0.5, tp

≤ 10 ms

ICM

100

mA

Output power dissipation

Pdiss

150

mW

COUPLER

Isolation test voltage

between emitter and detector, refer to

climate DIN 40046, part 2, Nov. 74

VISO

5000

VRMS

Isolation resistance

VIO = 500 V, Tamb = 25 °C

RIO

≥ 1012

Ω

VIO = 500 V, Tamb = 100 °C

RIO

≥ 1011

Ω

Storage temperature range

Tstg

-55 to +150

°C

Ambient temperature range

Tamb

-55 to +110

°C

Soldering temperature (1)

2 mm from case,

≤ 10 s

Tsld

260

°C

ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

PART

SYMBOL

MIN.

TYP.

MAX.

UNIT

INPUT

Forward voltage

IF = 60 mA

VF

-

1.35

1.65

V

Reverse current

VR = 6.0 V

IR

-0.01

10μA

Capacitance

VR = 0 V, f = 1.0 MHz

CO

-13-

pF

OUTPUT

Collector emitter capacitance

VCE = 5.0 V, f = 1.0 MHz

CCE

-5.2

-

pF

Collector emitter leakage

current

VCE = 10 V

SFH1617A-1

ICEO

-2.0

50

nA

SFH1617A-2

ICEO

-2.0

50

nA

SFH1617A-3

ICEO

-5.0

100

nA

SFH1617A-4

ICEO

-5.0

100

nA

COUPLER

Collector emitter saturation

voltage

IF = 10 mA, f = 1.0 MHz

VCEsat

-

0.25

0.4

V

Coupling capacitance

CC

-0.4

-

pF