2

A product Line of

Diodes Incorporated

PI3USB103

www.diodes.com

01/18/17

DC Electrical Characteristics for USB 2.0 Switching over Operating Range

(TA = –40°C to +85°C, VDD = 3.0 - 3.6V)

Parameter

Description

Test Conditions(1)

Min.

Typ.(2)

Max.

Units

VIH

Input HIGH Voltage

Guaranteed

HIGH level

VDD = 3.3V

1.3

VDD

V

VIL

Input LOW Voltage

Guaranteed HIGH level

GND

0.6

VIK

Clamp Diode Voltage

VDD = Max., IIK = –18mA

-1.2

IIH

Input HIGH Current

VDD = Max., VIH = VDD

±5

µA

IIL

Input LOW Current

VDD = Max., VIL = GND

±5

RON

Switch On-Resistance for USB

2.0 HS signal(3)

VDD = Min., -0.4V ≤ Vinput ≤ 1.0V,

ION = –40mA

3.0

5.0

Ω

RON

Switch On-Resistance for USB

FS signal

VDD = min., 0V ≤ Vinput ≤ 3.3V

9

RON

Switch On-Resistance for MHL

signal

VDD = min. 2V ≤ Vinput ≤ 3.3V

9

RON(flat)

On-resistance flatness

VDD = min. -0.4V ≤ Vinput ≤ 1.0V

0.15

0.5

D

RON

On-Resistance match from cen-

ter ports to any other port(3)

VDD = Min., -0.4V ≤ Vinput ≤ 0.4V,

ION = -40mA

0.9

2.0

IOZ

I/O leakage current when port

is off

VDD = 3.6V, Vinput = 0 to 3.6V,

switch = off, OE = HIGH

±2

µA

IOFF

Signal leakage when chip is off

VDD = 0V, Vinput = 0 to 7V

±10

µA

Notes:

1. For max. or min. conditions, use appropriate value specified under Electrical Characteristics for the applicable device type.

2. VDD = 3.0 - 3.6V, TA = 25°C ambient and maximum loading.

3. Measured by the voltage drop between D and Dn pin at indicated current through the Switch On-Resistance is determined by the lower of the voltages on the two

(D, Dn) pins.

All trademarks are property of their respective owners.

Storage Temperature ......................................................–65°C to +150°C

Supply Voltage to Ground Potential .................................–0.5V to +4.0V

DC Input Voltage .................................................................–0.5V to +7V

DC Output Current ........................................................................120mA

Power Dissipation .............................................................................0.5W

Note: Stresses greater than those listed under MAXIMUM

RATINGS may cause permanent damage to the device. This

is a stress rating only and functional operation of the device

at these or any other conditions above those indicated in the

operational sections of this specification is not implied. Ex-

posure to absolute maximum rating conditions for extended

periods may affect reliability.

Maximum Ratings

(Above which useful life may be impaired. For user guidelines, not tested.)

Power Supply Characteristics (VDD = 3.0 - 3.6V)

Parameters Description

Test Conditions(1)

Min.

Typ.

Max.

Units

ICC

Power Supply Current

VDD = Max., VSEL = GND or VDD, OE = LOW

75

µA

VDD = Max, VSEL = 1.5V - 2.1V,

100

µA

ICCq

Quiescent Power Supply

Current

VDD = 3.3V, VSEL = GND or VDD,

6

µA

VDD = 3.3V, VSEL = 1.5V - 2.1V,

8

µA

Notes:

1. For max. or min. conditions, use appropriate value specified under Electrical Characteristics for the applicable device type.

17-0003