TCLT111. Series

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Vishay Semiconductors

Rev. 1.6, 15-Oct-15

3

Document Number: 81282

For technical questions, contact: optocoupleranswers@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

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Note

• As per IEC 60747-5-5, § 7.4.3.8.2, this optocoupler is suitable for “safe electrical insulation” only within the safety ratings. Compliance with

the safety ratings shall be ensured by means of protective circuits.

Fig. 1 - Derating Diagram

Fig. 2 - Test Pulse Diagram for Sample Test According to

DIN EN 60747-5-5 (VDE 0884-5); IEC 60747-5-5

SAFETY AND INSULATION RATINGS

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

Tested withstanding isolation voltage

According to UL1577, t = 1 s

VISO

5000

VRMS

Maximum transient isolation voltage

According to DIN EN 60747-5-5

VIOTM

8000

Vpeak

Maximum repetitive peak isolation voltage

According to DIN EN 60747-5-5

VIORM

890

Vpeak

Partial discharge test voltage - lot test (sample test)

tTr = 60 s, ttest = 10 s, (see figure 2)

Vpd

13 000

V

Isolation resistance

Tamb = 25 °C, VIO = 500 V

RIO

≥ 1012

Ω

Tamb = 100 °C, VIO = 500 V

RIO

≥ 1011

Ω

Tamb = 150 °C, VIO = 500 V

(construction test only)

RIO

≥ 109

Ω

Output safety power

PSO

265

mW

Input safety current

ISI

130

mA

Input safety temperature

TS

150

°C

Creepage distance

DIP-6, option 6

≥ 8mm

Clearance distance

DIP-6, option 6

≥ 8mm

Insulation distance (internal)

0.75

mm

0

25

50

75

125

0

50

100

150

200

300

Tsi - Safety Temperature (°C)

150

94 9182-2

100

250

IR-diode

Isi (mA)

Phototransistor

P

so (mW)

t

13930

t1, t2 = 1 s to 10 s

t3, t4 = 1 s

ttest = 10 s

tstres = 12 s

VIOTM

Vpd

VIOWM

VIORM

0

t1

ttest

tTr = 60 s

tstres

t3

t4

t2

SWITCHING CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX.

UNIT

Delay time

VS = 5 V, IC = 2 mA, RL = 100

Ω, (see figure 3)

td

-3-

μs

Rise time

VS = 5 V, IC = 2 mA, RL = 100

Ω, (see figure 3)

tr

-3-

μs

Fall time

VS = 5 V, IC = 2 mA, RL = 100

Ω, (see figure 3)

tf

-4.7

-

μs

Storage time

VS = 5 V, IC = 2 mA, RL = 100

Ω, (see figure 3)

ts

-0.3

-

μs

Turn-on time

VS = 5 V, IC = 2 mA, RL = 100

Ω, (see figure 3)

ton

-6-

μs

Turn-off time

VS = 5 V, IC = 2 mA, RL = 100

Ω, (see figure 3)

toff

-5-

μs

Turn-on time

VS = 5 V, IF = 10 mA, RL = 1 k

Ω, (see figure 4)

ton

-9-

μs

Turn-off time

VS = 5 V, IF = 10 mA, RL = 1 k

Ω, (see figure 4)

toff

-10-

μs