FMMT458 datasheet(2/3 Pages) ISC

部件名	FMMT458

功能描述	isc Silicon NPN Power Transistors

PDF	3 Pages

Scroll/Zoom	100%

制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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isc Website：www.iscsemi.com

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Isc Silicon NPN Power Transistors

FMMT458

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

V(BR)CBO

Collector-Base Breakdown Voltage

IC= 0.1mA; IE= 0

400

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC= 1.0mA; IB= 0

400

V(BR)EBO

Emitter-Base Breakdown Voltage

IE= 0.1mA; IC= 0

5.0

ICBO

Collector Cutoff Current

VCE= 320V; VEB= 0

0.1

µA

IEBO

Emitter Cutoff Current

VEB= 4.0V; IC= 0

0.1

µA

VCE(sat)

Collector-Emitter Saturation Voltage

IC= 20mA, IB = 2.0mA

IC= 50mA, IB = 6.0mA

0.2

0.5

VBE(on)

Base -emitter saturation voltage

IC = 50mA，VCE = 10V

0.9

hFE

DC Current Gain

IC= 1.0mA, VCE = 10 V

IC= 50mA, VCE = 10 V

IC= 100mA, VCE = 10 V

100

300

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