Data Sheet

ADR3625

SPECIFICATIONS

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Rev. 0 | 3 of 21

ELECTRICAL CHARACTERISTICS

Input voltage (VIN) = 3 V to 16 V, output current capacity (IL) = 0 mA, load capacitance (CL) = 1 μF, ENABLE voltage (VEN) = VIN, and –40°C ≤

TA ≤ +125°C, unless otherwise noted.

Table 2.

Parameter

Symbol

Test Conditions/Comments

Min

Typ

Max

Unit

OUTPUT VOLTAGE

VOUT

TA = 25°C

A Grade

2.498

2.500

2.502

V

B Grade

2.499

2.500

2.501

V

INITIAL OUTPUT VOLTAGE ERROR

VOUT_ERR

TA = 25°C

A Grade

±0.08

%

B Grade

±0.04

%

SOLDER HEAT RESISTANCE SHIFT1

–0.06

%

TEMPERATURE COEFFICIENT

TCVOUT

See the Terminology section

A Grade

4

6

ppm/°C

B Grade

2

3

ppm/°C

LINE REGULATION

ΔVOUT/ΔVIN

VIN = 3.0 V to 16 V

0.5

2

ppm/V

LOAD REGULATION

ΔVOUT/ΔIL

Sourcing

IL = 0 mA to 10 mA, VIN = 3 V

10

15

ppm/mA

IL = 0 mA to 50 mA, VIN = 4 V

3

5

ppm/mA

Sinking

IL = 0 mA to 10 mA, VIN = 3 V

20

30

ppm/mA

OUTPUT CURRENT CAPACITY

IL

Sourcing

VIN = 4 V to 16 V

50

70

mA

Sinking

VIN = 3 V to 16 V

10

20

mA

Short Circuit to GND

VIN = 16 V

90

mA

Short Circuit to VIN

VIN = 16 V

70

mA

QUIESCENT CURRENT

IQ

Normal Operation

VEN ≥ 1.17 V

65

75

μA

Shutdown

VEN ≤ 0.63 V

1.5

3

μA

DROPOUT VOLTAGE

VDO

IL = 10 mA

0.25

0.5

V

IL = 50 mA

0.8

1

V

ENABLE PIN

TA = 25°C

Input High Voltage

VENH

1.17

V

Input Low Voltage

VENL

0.63

V

Leakage Current

VENLEAK

0.3

1

μA

OUTPUT VOLTAGE NOISE

eN p-p

TA = 25°C

0.1 Hz to 10 Hz

3

ppm p-p

0.55

ppmRMS

10 Hz to 1 kHz

4

ppmRMS

OUTPUT VOLTAGE NOISE DENSITY

eN

TA = 25°C, 1 kHz

300

nV/√Hz

THERMAL HYSTERESIS

ΔVOUT_HYS

+25°C to +125°C to –40°C to +25°C (full cycle)

–7

ppm

25°C to 125°C to 25°C (half cycle)

15

ppm

RIPPLE REJECTION RATIO

RRR

TA = 25°C, input frequency (fIN) = 60 Hz

64

dB

LONG-TERM DRIFT

ΔVOUT_LTD

TA = 25°C, relative humidity = 30%

250 hours (early life drift)

90

ppm

1000 hours

140

ppm

4500 hours

160

ppm

TURN-ON SETTLING TIME

tR

TA = 25°C, output capacitor (COUT) = 0.1 µF, input

capacitor (CIN) = 0.1 µF,

load resistance (RL) = 1 kΩ

600

μs