DMHC6070LSD

Document number: DS38714 Rev. 1 - 2

3 of 10

www.diodes.com

April 2016

© Diodes Incorporated

DMHC6070LSD

Electrical Characteristics

– N-Channel (@T

A = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

BVDSS

60





V

ID = 250µA, VGS= 0V

Zero Gate Voltage Drain Current

IDSS





1

µA

VDS= 60V, VGS= 0V

Gate-Source Leakage

IGSS





100

nA

VGS= 20V, VDS= 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

VGS(TH)

1.0



3.0

V

ID= 250µA, VDS= VGS

Static Drain-Source On-Resistance

RDS(ON)



60

100

m

Ω

VGS= 10V, ID= 1.0A

70

120

VGS= 4.5V, ID= 0.5A

Diode Forward Voltage

VSD



0.8

1.2

V

VGS= 0V, IS= 3A

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

CISS



731



pF

VDS= 20V, VGS= 0V

f= 1MHz

Output Capacitance

COSS



34



Reverse Transfer Capacitance

CRSS



23



Gate resistance

RG

—

1.3

—

Ω

VDS = 0V, VGS = 0V, f = 1.0MHz

Total Gate Charge

QG



5.2



nC

VGS= 4.5V

VDS= 30V

ID= 3A

Total Gate Charge

QG



11.5



VGS= 10V

Gate-Source Charge

QGS



2.1



Gate-Drain Charge

QGD



1.5



Turn-On Delay Time

tD(ON)



9.6



ns

VDD= 30V, VGS= 10V

RL  50Ω, RG  20Ω

Turn-On Rise Time

tR



11



Turn-Off Delay Time

tD(OFF)



61



Turn-Off Fall Time

tF



21



Body Diode Reverse Recovery Time

tRR



10.5



ns

IS = 1.0A, dI/dt = 100A/μs

Body Diode Reverse Recovery Charge

QRR



4.0



nC

IS = 1.0A, dI/dt = 100A/μs

Electrical Characteristics

– P-Channel (@T

A = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

BVDSS

-60

—

—

V

VGS = 0V, ID = -250μA

Zero Gate Voltage Drain Current

IDSS

—

—

-1

μA

VDS = -60V, VGS = 0V

Gate-Source Leakage

IGSS

—

—

±100

nA

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

VGS(TH)

-1

—

-3

V

VDS = VGS, ID = -250μA

Static Drain-Source On-Resistance

RDS(ON)

—

120

170

m

Ω

VGS = -10V, ID = -1.0A

170

250

VGS = -4.5V, ID = -0.5A

Diode Forward Voltage

VSD

—

-0.8

-1.2

V

VGS = 0V, IS = -2A

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

CISS



618



pF

VDS = -20V, VGS = 0V,

f = 1.0MHz

Output Capacitance

COSS



36



Reverse Transfer Capacitance

CRSS



26



Gate resistance

RG



13



Ω

VDS = 0V, VGS = 0V, f = 1.0MHz

Total Gate Charge

QG



4.3



nC

VGS= -4.5V

VDS= -30V

ID= -2A

Total Gate Charge

QG



8.9



VGS= -10V

Gate-Source Charge

QGS



1.4



Gate-Drain Charge

QGD



1.7



Turn-On Delay Time

tD(ON)



7.6



ns

VDD= -30V, VGS= -10V

RL  50Ω, RG  20Ω

Turn-On Rise Time

tR



11.6



Turn-Off Delay Time

tD(OFF)



79.8



Turn-Off Fall Time

tF



37.8



Body Diode Reverse Recovery Time

tRR



10.8



ns

IS = -1.0A, dI/dt = 100A/μs

Body Diode Reverse Recovery Charge

QRR



3.8



nC

IS = -1.0A, dI/dt = 100A/μs

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

6. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.