© 2004 IXYS All rights reserved

2 - 2

IXYS reserves the right to change limits, test conditions and dimensions.

VBO 30

Fig. 1 Forward current versus

voltage drop per diode

Fig. 2 Surge overload current per diode

I

Fig. 3

(1-10ms) per diode or thyristor

Fig. 4 Power dissipation versus direct output current and ambient temperature

Fig.5 Maximum forward current

at case temperature

Fig. 6 Transient thermal impedance per diode or thyristor, calculated

1.0

1.5

2.0

2.5

3.0

0

50

100

150

200

V [V]

F

I

F

[A]

1:T

= 150°C

VJ

2:T

= 25°C

VJ

1

2

0.4

0.6

0.8

1

1.2

1.4

1.6

10

0

10

1

10

2

10

3

t[ms]

I

(A)

FSM

TVJ=45°C

TVJ=150°C

400

360

I

------

IFSM

F(OV)

0 VRRM

1/2 V RRM

1 VRRM

2

4

6

10

TVJ=45°C

TVJ=1 50°C

t [ms ]

1

10

10

2

3

As

2

30

10

0

20

40

60

80

50

55

60

65

70

75

80

85

90

95

100

105

110

115

120

125

130

135

140

145

150

T C

° C

DC

sin.180°

rec.120°

rec.60°

rec.30°

5.57

2.23

1.12

0.57

0.29 0.01

= RTHCA [K/W]

I F AV M

[A ]

Tamb

[K]

05 0

10 0

1 5 0

[W ]

PVTOT

PSB 35

50

100

150

200

0

10

20

30

40

DC

.180°

.120°

.60°

sin

rec

rec

rec.30°

T (°C)

C

I

dAV

[A]

0.01

0.1

1

10

1

2

3

4

5

K/W

Z th

t[s]

Z

thJK

Z

thJC