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PDS3100Q 数据表(PDF) 2 Page - Diodes Incorporated

部件名 PDS3100Q
功能描述  3A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER
PDF  5 Pages
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制造商  DIODES [Diodes Incorporated]
网页  http://www.diodes.com
标志 DIODES - Diodes Incorporated

PDS3100Q 数据表(HTML) 2 Page - Diodes Incorporated

  PDS3100Q Datasheet HTML 1Page - Diodes Incorporated PDS3100Q Datasheet HTML 2Page - Diodes Incorporated PDS3100Q Datasheet HTML 3Page - Diodes Incorporated PDS3100Q Datasheet HTML 4Page - Diodes Incorporated PDS3100Q Datasheet HTML 5Page - Diodes Incorporated  
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POWERDI is a registered trademark of Diodes Incorporated.
PDS3100Q
Document number: DS33876 Rev. 1 - 2
2 of 5
www.diodes.com
February 2014
© Diodes Incorporated
PDS3100Q
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
100
V
RMS Reverse Voltage
VR(RMS)
70
V
Average Rectified Output Current (see also Figure 5)
IO
3
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave Superimposed on Rated Load
IFSM
90
A
Thermal Characteristics
Characteristic
Symbol
Typ
Max
Unit
Thermal Resistance Junction to Soldering Point
RθJS
6.0
°C/W
Thermal Resistance Junction to Ambient Air (Note 6) TA = +25°C
RθJA
95
°C/W
Thermal Resistance Junction to Ambient Air (Note 7) TA = +25°C
RθJA
70
°C/W
Thermal Resistance Junction to Ambient Air (Note 8) TA = +25°C
RθJA
50
°C/W
Operating Temperature Range
TJ
-65 to +150
°C
Storage Temperature Range
TSTG
-65 to +175
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Reverse Breakdown Voltage (Note 9)
V(BR)R
100
V
IR = 0.2mA
Forward Voltage
VF
0.71
0.76
V
IF = 3A, TJ = +25°C
0.61
0.65
IF = 3A, TJ = +100°C
0.57
0.61
IF = 3A, TJ = +125°C
0.78
0.84
IF = 6A, TJ = +25°C
0.68
0.75
IF = 6A, TJ = +100°C
0.64
0.68
IF = 6A, TJ = +125°C
Reverse Current (Note 9)
IR
2
100
μA
TJ = +25°C, VR = 100V
0.4
5
mA
TJ = +100°C, VR = 100V
2
20
mA
TJ = +125°C, VR = 100V
Notes:
6. FR-4 PCB, 2 oz. Copper, minimum recommended pad layout per http://www.diodes.com.
7. Polymide PCB, 2 oz. Copper, minimum recommended pad layout per http://www.diodes.com.
8. Polymide PCB, 2 oz. Copper. Cathode pad dimensions 9.4mm x 7.2mm. Anode pad dimensions 2.7mm x 1.6mm.
9. Short duration pulse test used to minimize self-heating effect.



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