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XP6501 数据表(PDF) 1 Page - Panasonic Semiconductor |
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XP6501 数据表(HTML) 1 Page - Panasonic Semiconductor |
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1 / 2 page ![]() 1 Composite Transistors XP6501 Silicon NPN epitaxial planer transistor For general amplification s Features q Two elements incorporated into one package. q Reduction of the mounting area and assembly cost by one half. s Basic Part Number of Element q 2SD601A × 2 elements s Absolute Maximum Ratings (Ta=25˚C) Unit: mm Marking Symbol: 5N Internal Connection Parameter Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 7V Collector current IC 100 mA Peak collector current ICP 200 mA Total power dissipation PT 150 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 to +150 ˚C Rating of element Overall s Electrical Characteristics (Ta=25˚C) Parameter Symbol Conditions min typ max Unit Collector to base voltage VCBO IC = 10µA, IE = 0 60 V Collector to emitter voltage VCEO IC = 2mA, IB = 0 50 V Emitter to base voltage VEBO IE = 10µA, IC = 0 7 V Collector cutoff current ICBO VCB = 20V, IE = 0 0.1 µA ICEO VCE = 10V, IB = 0 100 µA Forward current transfer ratio hFE VCE = 10V, IC = 2mA 160 460 Forward current transfer hFE ratio hFE (small/large) *1 VCE = 10V, IC = 2mA 0.5 0.99 Collector to emitter saturation voltage VCE(sat) IC = 100mA, IB = 10mA 0.1 0.3 V Transition frequency fT VCB = 10V, IE = –2mA, f = 200MHz 150 MHz Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz 3.5 pF 1 : Emitter (Tr1) 4 : Collector (Tr2) 2 : Emitter (Tr2) 5 : Base (Tr1) 3 : Base (Tr2) 6 : Collector (Tr1) EIAJ : SC–88 S–Mini Type Package (6–pin) 2.1 ±0.1 1.25 ±0.1 0.425 0.425 1 2 3 6 5 4 0.2 ±0.1 16 5 Tr2 Tr1 2 34 *1 Ratio between 2 elements |
类似零件编号 - XP6501 |
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类似说明 - XP6501 |
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