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TC7SA04FU 数据表(PDF) 1 Page - Toshiba Semiconductor |
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TC7SA04FU 数据表(HTML) 1 Page - Toshiba Semiconductor |
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1 / 9 page ![]() TC7SA04F/FU 2002-12-13 1 TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SA04F,TC7SA04FU Inverter with 3.6 V Tolerant Input and Output Features · Low voltage operation : VCC = 1.8~3.6 V · High speed operation : tpd = 2.8 ns (max) (VCC = 3.0~3.6 V) : tpd = 3.7 ns (max) (VCC = 2.3~2.7 V) : tpd = 7.4 ns (max) (VCC = 1.8 V) · High Output current : IOH/IOL = ±24 mA (min) (VCC = 3.0 V) : IOH/IOL = ±18 mA (min) (VCC = 2.3 V) : IOH/IOL = ±6 mA (min) (VCC = 1.8 V) · Latch-up performance : ±300 mA or more · ESD performance : Human body model > ±200 V : Machine model > ±2000 V · Power down protection is provided on all inputs and outputs. · TC74VCX04FT equivalent. Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Power supply voltage VCC −0.5~4.6 V DC input voltage VIN −0.5~4.6 V −0.5~4.6 (Note 1) DC output voltage VOUT −0.5~VCC + 0.5 (Note 2) V Input diode current IIK −50 mA Output diode current IOK ±50 (Note 3) mA DC output current IOUT ±50 mA Power dissipation PD 200 mW DC VCC/ground current ICC ±100 mA Storage temperature range Tstg −65~150 °C Note 1: VCC = 0 V Note 2: High or low state. IOUT absolute maximum rating be observed. Note 3: VOUT < GND, VOUT > VCC TC7SA04F TC7SA04FU Weight SSOP5-P-0.95 : 0.016 g (typ.) SSOP5-P-0.65A : 0.006 g (typ.) |
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