NAND01GR3B datasheet(39/59 Pages) STMICROELECTRONICS

39 / 59 page

39/59

NAND512-B, NAND01G-B, NAND02G-B, NAND04G-B, NAND08G-B

PROGRAM AND ERASE TIMES AND ENDURANCE CYCLES

The Program and Erase times and the number of

Program/ Erase cycles per block are shown in Ta-

ble 18.

Table 18. Program, Erase Times and Program Erase Endurance Cycles

MAXIMUM RATING

Stressing the device above the ratings listed in Ta-

ble 19., Absolute Maximum Ratings, may cause

permanent damage to the device. These are

stress ratings only and operation of the device at

these or any other conditions above those indicat-

ed in the Operating sections of this specification is

not implied. Exposure to Absolute Maximum Rat-

ing conditions for extended periods may affect de-

vice

reliability.

Refer

also

the

STMicroelectronics SURE Program and other rel-

evant quality documents.

Table 19. Absolute Maximum Ratings

Note: 1. Minimum Voltage may undershoot to –2V for less than 20ns during transitions on input and I/O pins. Maximum voltage may over-

shoot to VDD + 2V for less than 20ns during transitions on I/O pins.

Parameters

NAND Flash

Unit

Min

Typ

Max

Page Program Time

300

700

µs

Block Erase Time

3ms

Program/Erase Cycles (per block)

100,000

cycles

Data Retention

years

Symbol

Parameter

Value

Unit

Min

Max

TBIAS

Temperature Under Bias

–

°C

TSTG

Storage Temperature

–

°C

VIO

(1)

Input or Output Voltage

1.8V devices

–

3 V devices

–

VDD

Supply Voltage

1.8V devices

–

3 V devices

–

NAND01GR3B 数据表(PDF) 39 Page - STMicroelectronics

NAND01GR3B 数据表(HTML) 39 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59

数据表下载