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STD19NF20 数据表(PDF) 3 Page - STMicroelectronics

部件名 STD19NF20
功能描述  N-channel 200 V, 0.11 Ω, 15 A, MESH OVERLAY™ Power MOSFETs in D2PAK, DPAK, TO‑220FP and TO-220 packages
PDF  30 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STD19NF20 数据表(HTML) 3 Page - STMicroelectronics

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Electrical characteristics
(Tcase = 25 °C unless otherwise specified)
Table 4. Static
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source breakdown voltage
VGS = 0 V, ID = 1 mA
200
V
IDSS
Zero gate voltage drain current
VGS = 0 V, VDS = 200 V
1
µA
VGS = 0 V, VDS = 200 V,
TC = 125 °C(1)
10
IGSS
Gate-body leakage current
VDS = 0 V, VGS = ±20 V
±100
nA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
2
3
4
V
RDS(on)
Static drain-source on-resistance
VGS = 10 V, ID = 7.5 A
0.11
0.16
Ω
1. Defined by design, not subject to production test.
Table 5. Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Ciss
Input capacitance
VDS = 25 V, f = 1 MHz, VGS = 0 V
-
800
-
pF
Coss
Output capacitance
-
165
-
Crss
Reverse transfer capacitance
-
26
-
Qg
Total gate charge
VDD = 160 V, ID = 15 A,
VGS = 0 to 10 V
(see Figure 16. Test circuit for gate
charge behavior)
-
24
-
nC
Qgs
Gate-source charge
-
4.4
-
Qgd
Gate-drain charge
-
11.6
-
Table 6. Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on delay time
VDD = 100 V, ID = 7.5 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 15. Test circuit for
resistive load switching times and
Figure 20. Switching time
waveform)
-
11.5
-
ns
tr
Rise time
-
22
-
td(off)
Turn-off delay time
-
19
-
tf
Fall time
-
11
-
Table 7. Source-drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain current
-
15
A
ISDM(1)
Source-drain current (pulsed)
-
60
A
VSD(2)
Forward on voltage
ISD = 15 A, VGS = 0 V
-
1.6
V
STB19NF20,STD19NF20,STF19NF20,STP19NF20
Electrical characteristics
DS4935 - Rev 7
page 3/30



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