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2ST2480 数据表(PDF) 3 Page - STMicroelectronics

部件名 2ST2480
功能描述  Complementary power transistors
PDF  7 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

2ST2480 数据表(HTML) 3 Page - STMicroelectronics

  2ST2480 Datasheet HTML 1Page - STMicroelectronics 2ST2480 Datasheet HTML 2Page - STMicroelectronics 2ST2480 Datasheet HTML 3Page - STMicroelectronics 2ST2480 Datasheet HTML 4Page - STMicroelectronics 2ST2480 Datasheet HTML 5Page - STMicroelectronics 2ST2480 Datasheet HTML 6Page - STMicroelectronics 2ST2480 Datasheet HTML 7Page - STMicroelectronics  
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Obsolete
Product(s)
- Obsolete
Product(s)
2ST1480, 2ST2480
Electrical characteristics
Doc ID 16380 Rev 1
3/7
2
Electrical characteristics
Tcase = 25 °C; unless otherwise specified.
Note:
For PNP type voltage and current are negative.
2.1
Electrical characteristic (curves)
Table 4.
Electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ICBO
Collector cut-off current
(IE = 0)
VCE = 80 V
30
µA
IEBO
Emitter cut-off current
(IC = 0)
VEB = 5 V
100
µA
V(BR)CEO
(1)
1.
Pulse test: pulse duration
≤ 300 µs, duty cycle ≤ 2 %
Collector-emitter breakdown
voltage (IB = 0)
IC = 50 mA
80
V
VCE(sat)
(1)
Collector-emitter saturation
voltage
IC = 3 A
IB = 300 mA
0.4
V
VBE(on)
(1)
Base-emitter on voltage
IC = 3 A
VCE = 5 V
0.8
1
V
hFE
(1)
DC current gain
IC = 0.5 A
VCE = 5 V
for 2ST1480
for 2ST2480
IC = 3 A
VCE = 5 V
120
120
15
240
300
fT
Transition frequency
IC = 0.5 A_
VCE = 5 V
130
MHz
CCBO
Collector-base capacitance
(IE = 0)
VCB = 10 V
f = 1 MHz
60
pF
Figure 2.
Safe operating area
Figure 3.
Derating curve



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