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2STF2340 数据表(PDF) 3 Page - STMicroelectronics |
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2STF2340 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 11 page ![]() 2STF2340, 2STN2340 Electrical characteristics Doc ID 14222 Rev 2 3/10 2 Electrical characteristics Tcase = 25 °C unless otherwise specified Table 4. Electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit ICBO Collector cut-off current (IE = 0) VCB = - 40 V -0.1 µA IEBO Emitter cut-off current (IC = 0) VEB = - 5 V -0.1 µA V(BR)CBO (1) 1. Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2 % Collector-base breakdown voltage (IE = 0) IC = - 100 µA -40 V V(BR)CEO (1) Collector-emitter breakdown voltage (IB = 0) IC = - 10 mA -40 V V(BR)EBO Emitter-base breakdown voltage (IC = 0) IE = - 100 µA -5 V VCE(sat) (1) Collector-emitter saturation voltage IC = - 2 A IB = - 100 mA IC = - 3 A IB = - 150 mA -250 -350 mV mV VBE(sat) (1) Base-emitter saturation voltage IC = - 2 A IB = - 100 mA -1.2 V hFE (1) DC current gain IC = - 0.1 A VCE = - 2 V IC = - 1 A VCE = - 2 V IC = - 3 A VCE = - 2 V 100 180 220 450 ft Transition frequency IC = - 0.1 A VCE = - 5 V f = 100 MHz 100 MHz CCBO Collector-base capacitance (IE = 0) VCB = - 10 V f = 1 MHz 50 pF ton toff Resistive load Turn-on time Turn-off time IC = - 1.5 A VCC = - 10 V IB(on) = - IB(off) = - 150 mA VBB(off) = 5 V 80 450 ns ns |
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