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2STF2340 数据表(PDF) 3 Page - STMicroelectronics

部件名 2STF2340
功能描述  Low voltage fast-switching PNP power transistors
PDF  11 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

2STF2340 数据表(HTML) 3 Page - STMicroelectronics

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2STF2340, 2STN2340
Electrical characteristics
Doc ID 14222 Rev 2
3/10
2
Electrical characteristics
Tcase = 25 °C unless otherwise specified
Table 4.
Electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ICBO
Collector cut-off current
(IE = 0)
VCB = - 40 V
-0.1
µA
IEBO
Emitter cut-off current
(IC = 0)
VEB = - 5 V
-0.1
µA
V(BR)CBO
(1)
1.
Pulse test: pulse duration
≤ 300 µs, duty cycle ≤ 2 %
Collector-base
breakdown voltage
(IE = 0)
IC = - 100 µA
-40
V
V(BR)CEO
(1)
Collector-emitter
breakdown voltage
(IB = 0)
IC = - 10 mA
-40
V
V(BR)EBO
Emitter-base breakdown
voltage (IC = 0)
IE = - 100 µA
-5
V
VCE(sat)
(1)
Collector-emitter
saturation voltage
IC = - 2 A
IB = - 100 mA
IC = - 3 A
IB = - 150 mA
-250
-350
mV
mV
VBE(sat)
(1)
Base-emitter saturation
voltage
IC = - 2 A
IB = - 100 mA
-1.2
V
hFE
(1)
DC current gain
IC = - 0.1 A
VCE = - 2 V
IC = - 1 A
VCE = - 2 V
IC = - 3 A
VCE = - 2 V
100
180
220
450
ft
Transition frequency
IC = - 0.1 A
VCE = - 5 V
f = 100 MHz
100
MHz
CCBO
Collector-base
capacitance (IE = 0)
VCB = - 10 V
f = 1 MHz
50
pF
ton
toff
Resistive load
Turn-on time
Turn-off time
IC = - 1.5 A
VCC = - 10 V
IB(on) = - IB(off) = - 150 mA
VBB(off) = 5 V
80
450
ns
ns



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