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SMA4F10A 数据表(PDF) 5 Page - STMicroelectronics |
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SMA4F10A 数据表(HTML) 5 Page - STMicroelectronics |
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5 / 14 page ![]() Figure 7. Junction capacitance versus reverse applied voltage 0.01 0.1 1 10 1 10 100 1000 C (nF) VR (V) SMA4F5.0A SMA4F33A SMA4F70A SMA4F188A f = 1 MHz Vosc = 30mVRMS Tj = 25 °C Figure 8. Leakage current versus junction temperature 1 10 100 1000 10000 25 50 75 100 125 150 175 IR (nA) Tj (°C) VR = VRM VRM < 10V VRM ≥ 10V Figure 9. Peak forward voltage drop versus peak forward current 0 1 10 100 0 0.5 1 1.5 2 2.5 3 3.5 IF (A) VF (V) single pulse Tj = 25 °C Tj = 175 °C Figure 10. Thermal impedance junction to ambient versus pulse duration 1 10 100 1000 0.01 0.1 1 10 100 1000 Zth(j-a) (°C/W) tp (s) Single pulse on recommended footprint. Epoxy printed circuit board FR4, 70 µm Cu thickness Figure 11. Thermal resistance junction to ambient versus copper area under each lead 0 20 40 60 80 100 120 140 160 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 Rth(j-a) (°C/W) SCu (cm²) Single pulse on recommended footprint. Epoxy printed circuit board FR4, 70 µm Cu thickness SMA4FxxA Characteristics (curves) DS12542 - Rev 4 page 5/13 |
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