VCNT2020

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Vishay Semiconductors

Rev. 1.3, 21-Jan-2019

2

Document Number: 84285

For technical questions, contact: sensorstechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

ABSOLUTE MAXIMUM RATINGS

Fig. 1 - Power Dissipation vs. Ambient Temperature

Fig. 2 - Forward Current vs. Ambient Temperature

Fig. 3 - Test Circuit

0

20

40

60

80

100

120

140

160

180

0

20406080

100

T

amb - Ambient Temperature (°C)

R

thJA = 380 K/W

0

20

40

60

80

100

120

0

20406080

100

T

amb - Ambient Temperature (°C)

R

thJA = 380 K/W

BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX.

UNIT

INPUT (EMITTER)

Forward voltage

IF = 20 mA

VF

-

1.25

1.4

V

IF = 100 mA

-

1.5

1.7

Temperature coefficient of VF

IF = 20 mA

TKVF

--1.0

-

mV/K

Peak wavelength

IF = 100 mA

λP

-

940

-

nm

Reverse current

VR = 5 V

IR

-

-

10

μA

OUTPUT (DETECTOR)

Collector emitter breakdown voltage

IC = 0.1 mA, E = 0

V(BR)CEO

20

-

-

V

Emitter collector voltage

IE = 100 μA, E = 0

VECO

7-

-

V

Collector emitter dark current

VCE = 5 V, E = 0

ICEO

-

1

100

nA

SENSOR

Collector current

VCE = 5 V, IF = 20 mA, d = 1 mm

IC

0.5

1.6

3.5

mA

Current transfer ratio

IC/IF, d = 1 mm, VCE = 5 V

CTR

-

8

-

%

Rise time

IC = 0.8 mA, VCE = 5 V, RL = 100

Ω

tr

-10

70

μs

Fall time

IC = 0.8 mA, VCE = 5 V, RL = 100

Ω

tf

-15

70

μs

Object:

flat mirror

d = working distance 1 mm