1

3

TAB

D²PAK

2

D(2, TAB)

G(1)

S(3)

AM01476v1_tab

Features

Order code

VDS

RDS(on) max.

ID

STB33N60DM6

600 V

128 mΩ

25 A

•

Fast-recovery body diode

•

Lower RDS(on) per area vs previous generation

•

Low gate charge, input capacitance and resistance

•

100% avalanche tested

•

Extremely high dv/dt ruggedness

•

Zener-protected

Applications

•

Switching applications

Description

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-

recovery diode series. Compared with the previous MDmesh fast generation, DM6

combines very low recovery charge (Qrr), recovery time (trr) and excellent

improvement in RDS(on) per area with one of the most effective switching behaviors

available in the market for the most demanding high-efficiency bridge topologies and

ZVS phase-shift converters.

Product status link

STB33N60DM6

Product summary

Order code

STB33N60DM6

Marking

33N60DM6

Package

D2PAK

Packing

Tape and reel

N-channel 600 V, 115 mΩ typ., 25 A, MDmesh DM6 Power MOSFET

in a D2PAK package

STB33N60DM6

Datasheet

DS12904 - Rev 2 - July 2020

For further information contact your local STMicroelectronics sales office.

www.st.com