STB78NF55-08 datasheet(3/19 Pages) STMICROELECTRONICS

部件名	STB78NF55-08

功能描述	N-channel 55 V, 0.0065 Ω typ., 78 A STripFET™ II Power MOSFETs in D²PAK and TO-220 packages

PDF	19 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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3 / 19 page

DocID029564 Rev 1

3/19

STB78NF55-08, STP78NF55-08

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage

VGS

Gate-source voltage

± 20

(1)

Current limited package

Drain current (continuous) at TC = 25 °C

(1)

Drain current (continuous) at TC = 100 °C

IDM

(2)

Pulse width limited by safe operating area

Drain current (pulsed)

320

PTOT

Total dissipation at TC = 25 °C

300

Tstg

Operating junction temperature range

- 55 to 175

°C

Storage temperature range

Table 3. Thermal data

Symbol

Parameter

Value

Unit

D²PAK

TO-220

Rthj-case Thermal resistance junction-case

0.5

°C/W

Rthj-pcb

Thermal resistance junction-pcb

35(1)

When mounted on 1 inch2 FR-4 board, 2 oz Cu

°C/W

Rthj-amb

Thermal resistance junction-ambient

62.5

°C/W

Table 4. Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not-repetitive

(pulse width limited by Tj max)

EAS

Single pulse avalanche energy

(starting TJ=25 °C, ID=IAS, VDD= 30 V)

1000

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