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Electrical ratings

Table 1. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage

55

V

VGS

Gate-source voltage

±20

V

ID(1)

Drain current (continuous) at TC = 25 °C

80

A

Drain current (continuous) at TC = 100 °C

80

A

IDM(2)

Drain current (pulsed)

320

A

PTOT

Total power dissipation at TC = 25 °C

300

W

Derating factor

2.0

W/°C

EAS(3)

Single-pulse avalanche energy

980

mJ

dv/dt(4)

Peak diode recovery voltage slope

10

V/ns

Tstg

Storage temperature range

-55 to 175

°C

Tj

Operating junction temperature range

1. Current limited by package.

2. Pulse width limited by safe operating area.

3. Starting TJ = 25 °C, ID = 40 A, VDD = 37.5 V

4. ISD ≤ 80 A, di/dt ≤ 300 A/μs, VDD ≤ V(BR)DSS, TJ ≤ TJMAX

Table 2. Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case

0.5

°C/W

Rthj-amb

Thermal resistance junction-ambient

62.5

°C/W

STB85NF55T4, STP85NF55

Electrical ratings

DS2569 - Rev 12

page 2/18