TSAL7200

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Vishay Semiconductors

Rev. 2.0, 04-Jul-16

2

Document Number: 81012

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Fig. 1 - Power Dissipation Limit vs. Ambient Temperature

Fig. 2 - Forward Current Limit vs. Ambient Temperature

0

20

40

60

80

100

120

140

160

180

0

1020

3040506070

8090100

21211

Tamb - Ambient Temperature (°C)

RthJA = 230 K/W

0

20

40

60

80

100

120

0

10

203040

50607080

90 100

Tamb - Ambient Temperature (°C)

21212

RthJA = 230 K/W

BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX.

UNIT

Forward voltage

IF = 100 mA, tp = 20 ms

VF

-

1.35

1.6

V

IF = 1 A, tp = 100 μs

VF

-2.6

-

V

Temperature coefficient of VF

IF = 1 mA

TKVF

--1.8-

mV/K

Reverse current

VR = 5 V

IR

-

-

10

μA

Junction capacitance

VR = 0 V, f = 1 MHz, E = 0

Cj

-40

-

pF

Radiant intensity

IF = 100 mA, tp = 20 ms

Ie

40

72

200

mW/sr

IF = 1 A, tp = 100 μs

Ie

-

600

-

mW/sr

Radiant power

IF = 100 mA, tp = 20 ms



e

-40

-

mW

Temperature coefficient of



e

IF = 20 mA

TK



e

-

-0.6

-

%/K

Angle of half intensity



-± 17

-

deg

Peak wavelength

IF = 100 mA



p

-

940

-

nm

Spectral bandwidth

IF = 100 mA



-30

-

nm

Temperature coefficient of



p

IF = 100 mA

TK



p

-0.2

-

nm/K

Rise time

IF = 100 mA

tr

-15

-

ns

Fall time

IF = 100 mA

tf

-15

-

ns