VBP104FAS, VBP104FASR

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Vishay Semiconductors

Rev. 1.3, 24-Jun-14

2

Document Number: 81169

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BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

Fig. 1 - Reverse Dark Current vs. Ambient Temperature

Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature

Fig. 3 - Reverse Light Current vs. Irradiance

Fig. 4 - Reverse Light Current vs. Reverse Voltage

BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX.

UNIT

Forward voltage

IF = 50 mA

VF

11.3

V

Breakdown voltage

IR = 100 μA, E = 0

V(BR)

60

V

Reverse dark current

VR = 10 V, E = 0

Iro

230

nA

Diode capacitance

VR = 0 V, f = 1 MHz, E = 0

CD

48

pF

VR = 3 V, f = 1 MHz, E = 0

CD

17

40

pF

Open circuit voltage

Ee = 1 mW/cm2,

λ = 950 nm

Vo

350

mV

Temperature coefficient of Vo

Ee = 1 mW/cm2,

λ = 950 nm

TKVo

-2.6

mV/K

Short circuit current

Ee = 1 mW/cm2,

λ = 950 nm

Ik

32

μA

Temperature coefficient of Ik

Ee = 1 mW/cm2,

λ = 950 nm

TKIk

0.1

%/K

Reverse light current

Ee = 1 mW/cm2,

λ = 950 nm, VR = 5 V

Ira

25

35

μA

Angle of half sensitivity

ϕ

± 65

deg

Wavelength of peak sensitivity

λp

950

nm

Range of spectral bandwidth

λ0.5

780 to 1050

nm

Noise equivalent power

VR = 10 V,

λ = 950 nm

NEP

4 x 10-14

W/

√Hz

Rise time

VR = 10 V, RL = 1 k

Ω, λ = 820 nm

tr

100

ns

Fall time

VR = 10 V, RL = 1 k

Ω, λ = 820 nm

tf

100

ns

20

40

60

80

1

10

100

1000

100

94 8403

V

R = 10 V

T

amb - Ambient Temperature (°C)

0.6

0.8

1.0

1.2

1.4

94 8409

VR =5V

λ = 950 nm

100

80

60

40

20

0

T

- Ambient Temperature (°C)

amb

0.01

0.1

1

0.1

1

10

100

1000

10

94 8421

V

R = 5 V

λ = 950 nm

Ee - Irradiance (mW/cm

2)

0.1

1

10

1

10

100

V

R - Reverse Voltage (V)

100

94 8422

1 mW/cm2

0.5 mW/cm2

0.2 mW/cm2

0.1 mW/cm2

0.05 mW/cm2

λ = 950 nm