Preliminary Data

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to

change without notice.

March 2009

Rev 1

1/17

17

STAP57045

RF power transistor, LdmoST plastic family

N-channel enhancement-mode lateral MOSFETs

Features

■ Excellent thermal stability

■ Common source configuration

■ POUT = 45 W with 13 dB gain @ 945 MHz / 28 V

■ ST advanced PowerSO-10RF-STAP package

Description

The STAP57045 is a common source N-channel,

enhancement-mode lateral field-effect RF power

transistor. It is designed for high gain, broad band

commercial and industrial applications. It

operates at 28 V in common source mode at

frequencies of up to 1 GHz. STAP57045 boasts

the excellent gain, linearity and reliability of ST’s

latest LDMOS technology mounted in STAP1

plastic RF power package.

STAP package has been specially optimized for

RF needs and offers excellent performances and

ease of assembly.

Mounting recommendations are available in

www.st.com/rf/ (look for application note AN1294)

Figure 1.

Pin connection

STAP1

GATE

DRAIN

SOURCE

www.st.com

Table 1.

Device summary

Order code

Package

Packing

STAP57045

STAP1

Tube