Preliminary Data

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to

change without notice.

April 2009

Rev 1

1/8

8

STAP57100

RF power transistor the LdmoST family

Features

■ Excellent thermal stability

■ Common source configuration push-pull

■ POUT = 100 W with 14 dB gain @ 860 MHz

■ ST advanced PowerSO-10RF - STAP package

■ Load mismatch 10:1 all phases

■ In compliance with the 2002/95/EC european

directive

Description

The STAP57100 is a common source N-channel

enhancement-mode lateral field-effect RF power

transistor designed for broadband commercial

and industrial applications at frequencies up to

1.0 GHz. The STAP57100 is designed for high

gain and broadband performance operating in

common source mode at 28 V.

Figure 1.

Pin connection

1

22

4

5

3

1, 2 Drain

3 Source

4, 5 Gate

Table 1.

Device summary

Order code

Package

Branding

STAP57100

STAP2

STAP57100

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