Target specification

This is preliminary information on a new product foreseen to be developed. Details are subject to change without notice.

July 2009

Doc ID 15795 Rev 2

1/12

12

STAP85025

RF power transistor, LdmoST plastic family

N-channel enhancement-mode lateral MOSFETs

Features

■ Excellent thermal stability

■ Common source configuration

■ POUT = 25 W with 15.7 dB gain @ 870 MHz /

13.6 V

■ Plastic package

■ ESD protection

■ In compliance with the 2002/95/EC European

directive

Description

The STAP85025 is a common source N-channel,

enhancement-mode lateral field-effect RF power

transistor. It is designed for high gain, broadband

commercial and industrial applications. It

operates at 13.6 V in common source mode at

frequencies of up to 1 GHz. STAP85025 boasts

the excellent gain, linearity and reliability of ST’s

latest LDMOS technology mounted in STAP ST

advanced PowerSO-10RF package.

STAP85025’s superior linearity performance

makes it an ideal solution for car mobile radio.

The STAP ST plastic package was designed to

offer high reliability and high power capability.

It has been specially optimized for RF needs and

offers excellent RF performances and ease of

assembly.

Mounting recommendations are available in

www.st.com/rf/ (look for application note AN1294)

Figure 1.

Pin connection

STAP1

AM02217

Drain

Gate

Source

Table 1.

Device summary

Order code

Package

Packaging

STAP85025

STAP1

Tube

www.st.com