STP10P6F6 datasheet(3/24 Pages) STMICROELECTRONICS

部件名	STP10P6F6

功能描述	P-channel -60 V, 0.13 Ω typ., -10 A STripFET™ F6 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages

PDF	24 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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3 / 24 page

DocID022967 Rev 5

3/24

STD10P6F6, STF10P6F6, STP10P6F6, STU10P6F6

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

DPAK

IPAK

TO-220FP

TO-220

VDS

Drain-source voltage

-60

VGS

Gate-source voltage

± 20

(1)

Limited by package

Drain current (continuous) at TC = 25 °C

-10

Drain current (continuous) at TC = 100 °C

-7.2

IDM

(2)

Pulse width limited by safe operating area

Drain current (pulsed)

-40

PTOT

Total dissipation at TC = 25 °C

EAS

Single pulse avalanche energy

(starting TJ=25 °C, ID=-3 A, VDD=40 V)

VISO

Insulation withstand voltage (RMS) from all

three leads to external heat sink

(t=1 s; TC=25 °C)

2500

VDG

Drain-gate voltage (VGS = 0)

-20

Tstg

Storage temperature

-55 to 175

°C

Max. operating junction temperature

175

°C

Table 3. Thermal data

Symbol

Parameter

Value

Unit

DPAK

IPAK

TO-220FP TO-220

Rthj-case

Thermal resistance junction-case max

4.29

7.5

°C/W

Rthj-amb

Thermal resistance junction-ambient max

100

62.5

°C/W

Rthj-pcb

Thermal resistance junction-pcb max(1)

When mounted on 1 inch2 FR-4, 2 Oz copper board

°C/W

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